New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits

Hafizi, M.

doi:10.1109/16.711348

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Cited by 7 publications

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“…7 Device dimensions have continually decreased to improve device switching time and reduce power requirements. 8 Obtaining these small device dimensions requires precise control of the fabrication process. We have developed a fabrication procedure for small InP based DHBTs, with emitter dimensions down to 1 µm, using a process involving both wet etching and ECR plasma etching.…”

Section: Introductionmentioning

confidence: 99%

Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications

Kopf

Hamm

Wang

et al. 2000

J. Electron. Mater.

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We have fabricated reduced area InGaAs/InP DHBTs for high speed circuit applications. To produce the small dimensions required, a process involving both wet chemical and ECR plasma etching was developed. Optical emission spectroscopy was used for end-point detection during plasma etching. With this improved process, an f t of 170 and f max of 200 GHz were achieved for 1.2 × 3 µm 2 emitter size devices with a 500 Å base.

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Section: Introductionmentioning

confidence: 99%