New technology on tri-level resist doped with dye for submicron photolithographic process

Matsui, Shinji; Endo, Nobuhiro

doi:10.1016/0167-9317(83)90012-6

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…Although multilayer resist processing is an excellent method for the production of ultra fine resist patterns, compared with the usual single layer resist process, its weak points are complicated multi-step operations as well as a long etching time for RIE of the thick bottom resist layer. The etch rate of the bottom resist layer is very low; usually about 14 min for 1 pm depth (2). The low etch rate is not unique in the case of resists but a general characteristic in the anisotropic etching using etching masks, where the conditions of high vacuum and low flow rate of the etching gas are maintained in order to exclude side-etch.…”

Section: Dry Developable Resists For Nanometermentioning

confidence: 99%

“…From these figures one can see that sharp shaped thick resist patterns with vertical walls are obtained by maskless dry etching of the dry developable resist as we expected. Moreover, the etch rate in the maskless dry etching is extraordinarily fast compared with the case of the bottom layer etching in multilayer resist processing (2). The time required for the complete dry development of the SR X-ray-exposed dry developable resist coating was shown in Fig.…”

Section: Maskless Dry Etching Of Resist Patternmentioning

confidence: 99%

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Dry developable resist in e‐beam and sr lithography

Tsuda

Oikawa

Yabuta

et al. 1986

Polymer Engineering & Sci

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Dry developable resists comprised of poly(methyl isopropenyl ketone) (PMIPK) and 4‐methyl‐2,6‐dI‐(4′‐azldoben‐zylidene)‐cyclohexanone‐1 gave excellent results in SK lithography, i. e., high aspect ratio resist patterns with vertical walls were easily obtained by maskless dry etching in the single layer resist process. Because of the simplicity of single layer resist processing and the high etch rate in maskless dry etching for the formation of thick resist patterns, the dry developable resist in SR lithography may be advantageous to the multilayer resist for the purpose of generating high resolution, thick resist patterns with vertical walls. The resolution limit of the dry developable resist which reproduces the designed dimensions was 100 nm line and 200 nm space when a conventional e‐beam apparatus was used at 20 KV in the dry developable multilayer resist process.

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Section: Dry Developable Resists For Nanometermentioning

confidence: 99%

Section: Maskless Dry Etching Of Resist Patternmentioning

confidence: 99%