New three-dimensional AFM for CD measurement and sidewall characterization

Hua, Yueming; Buenviaje-Coggins, Cynthia; Lee, Yongha; Lee, Jungmin; Ryang, Kyung-deuk; Park, Sang-il

doi:10.1117/12.879545

Cited by 13 publications

(8 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3-D AFM is a relatively new technique that allows for direct, nondestructive characterization of the sidewalls of submicron structures. [42][43][44][45][46] Since propagation losses in fully etched silicon strip waveguides are sensitive to variations in SWR that are small compared to the total feature size, 31 accurate nondestructive analysis with 3-D AFM is a promising technique for the study and optimization of fabrication processes.…”

Section: Characterization Of Etched Waveguidesmentioning

confidence: 99%

“…3-D AFM measurements are performed with a Park Systems NX-3DM which tilts the sample stage by AE38 deg to directly measure the sidewalls of the 250-nm tall Si waveguides with a standard high aspect ratio AFM tip. 45,46 The NX-3DM system has a resolution of <0.2 nm and a noise level of <0.05 nm. Optical propagation losses are determined through both resonant and nonresonant techniques.…”

Section: Characterization Of Etched Waveguidesmentioning

confidence: 99%

See 1 more Smart Citation

Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

et al. 2014

View full text Add to dashboard Cite

We carried out a multiparameter fabrication study designed to reduce the line edge roughness (LER) of electron beam (e-beam) patterned hydrogen silsesquioxane resist for the purpose of producing low-loss silicon strip waveguides. Reduced mask roughness was achieved for 50°C pre-exposure baking, 5000 μC∕cm 2 dose with a beam spot size more than twice as large as the electron beam step size, development in 25% tetramethylammonium hydroxide and postdevelopment baking with rapid thermal annealing in an O 2 ambient at 1000°C. The LER caused by pattern fracturing and stage stitches was reduced with multipass writing and per-pass linear and rotational offsets. Si strip waveguides patterned with the optimized mask have root-mean-square sidewall roughness of 2.1 nm with a correlation length of 94 nm, as measured by three-dimensional atomic force microscopy. Measured optical propagation losses of these waveguides across the telecommunications C-band were 2.5 and 2.8 dB∕cm for the transverse magnetic and transverse electric modes, respectively. These reduced loss waveguides enable the fabrication of advanced planar lightwave circuit topologies.

show abstract

Section: Characterization Of Etched Waveguidesmentioning

confidence: 99%

Section: Characterization Of Etched Waveguidesmentioning

confidence: 99%

Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

et al. 2014

View full text Add to dashboard Cite

show abstract

“…The full 3D image provides detailed 3D information of the feature that is imaged, such as the top CD, middle CD, bottom CD, LER, LWR, sidewall angle, etc. [5]. Because a sharp conical tip is used, the tip can access the very small structures at the bottom of the feature, such as the small undercut at the very bottom of the photoresist line as seen in Figure 2.…”

Section: Park 3d Afm With Tilted Z Scannermentioning

confidence: 99%

High-throughput and non-destructive sidewall roughness measurement using 3-dimensional atomic force microscopy

Hua

Buenviaje-Coggins

Lee³

et al. 2012

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

As the feature size of the semiconductor device is becoming increasingly smaller and the transistor has become three-dimensional (e.g. Fin-FET structure), a simple Line Edge Roughness (LER) is no longer sufficient for characterizing these devices. Sidewall Roughness (SWR) is now the more proper metric for these metrology applications. However, current metrology technologies, such as SEM and OCD, provide limited information on the sidewall of such small structures. The subject of this study is the sidewall roughness measurement with a three-dimensional Atomic Force Microscopy (AFM) using tilted Z scanner. This 3D AFM is based on a decoupled XY and Z scanning configuration, in which the Z scanner can be intentionally tilted to the side. A sharp conical tip is typically used for imaging, which provides high resolution capability on both the flat surfaces (top and bottom) and the steep sidewalls.

show abstract

“…18 Resist-underlayer patterns were scanned with a regular silicon tip (radius of curvature <10 nm). 18 Resist-underlayer patterns were scanned with a regular silicon tip (radius of curvature <10 nm).…”

Section: Resist-underlayer Side Wall Imaging With 3d Afmmentioning

confidence: 99%

Fundamental study of extreme UV resist line edge roughness: Characterization, experiment, and modeling

Ayothi¹,

Singh²,

Hishiro³

et al. 2012

Journal of Vacuum Science & Technology B, Nanotechnology an

Self Cite

View full text Add to dashboard Cite

show abstract

New three-dimensional AFM for CD measurement and sidewall characterization

Cited by 13 publications

References 4 publications

Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

High-throughput and non-destructive sidewall roughness measurement using 3-dimensional atomic force microscopy

Fundamental study of extreme UV resist line edge roughness: Characterization, experiment, and modeling

Contact Info

Product

Resources

About