1976
DOI: 10.1109/tphp.1976.1135137
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New Type Thermal Printing Head Using Thin Film

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Cited by 25 publications
(13 citation statements)
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“…Recently it is utilized as diffusion barrier layers for Cu wiring of Si semiconductor devices due to the excellent thermal stability [37]. It is also applied as high-speed thermal printing head [38] and thin film resistors [39]. At 0 K, VN, NbN and TaN with cubic B1 structure are dynamical instable [40].…”
Section: Binary Nitridesmentioning
confidence: 99%
“…Recently it is utilized as diffusion barrier layers for Cu wiring of Si semiconductor devices due to the excellent thermal stability [37]. It is also applied as high-speed thermal printing head [38] and thin film resistors [39]. At 0 K, VN, NbN and TaN with cubic B1 structure are dynamical instable [40].…”
Section: Binary Nitridesmentioning
confidence: 99%
“…Protective layers are chosen from materials such as SiO 2 , Ta 2 O 5 [88,89], or SiC [89]. For reliability, the wear life of a protective layer must exceed the cycle life of the resistor and other head parts.…”
Section: Thermal Print Transducersmentioning
confidence: 99%
“…The resistor elements are chosen from materials such as Ta 2 N [88,94], Ta -SiC [90], Zr -N [91], Ta -SiO 2 , Cr -Si -O, Si-Ta [93], Ni -Cr, and Ta -Al. Thermal insulating layers can be glass or Al 2 O 3 [93], and conductors are usually NiCr -Au [88] or Ni -Au [86].…”
Section: Thermal Print Transducersmentioning
confidence: 99%
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“…In mechanical industry applications, TaN has effectively been employed in devising thermal printing heads of facsimile (Fax) machines and as corrosion and wear resistant material [11][12][13]. In electronics industry, a great interest has been shown in using TaN as thin film diffusion barrier between silicon and metallic layers of Ni [14], Al [15] and Cu [16,17].…”
Section: Introductionmentioning
confidence: 99%