New Waveguide Structures for Millimeter-Wave and Optical Integrated Circuits

“…Inculcation of the insulating layer of the high dielectric constant [8,9] in construction of microwave and millimeter wave devices improvise their performance and explicate their functionality by reducing conductor losses and induce at a higher frequency due to arousal of odd modes of propagation [10]. In the proposed structures, Hafnium oxide (ε r =25) of thickness 1.5 μmis inserted between the HRS substrate and top metallization to induce decaying fields in the insulator.…”

Section: Effect Of Dielectricmentioning

confidence: 99%

Design and EM Analysis of Dual Band Hilbert Curve Based Wilkinson Power Divider

Kaur¹,

Singh²,

Malhotra³

2016

Transactions on Electrical and Electronic Materials

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In this paper, two configurations (T-type and Y-type) of dual band Wilkinson Power Divider based upon Hilbert curves are presented. Formerly, the concept of Hilbert Curves was implemented in only designing microstrip antennas. In power dividers, this is the very first attempt of incorporating them for size reduction. In addition to this, an effect of inculcation of high-dielectric constant layer (Hafnium-oxide, HfO 2 , ε r = 25) between a substrate and top metallization in both configurations was investigated. The proposed configurations are designed on a high resistive silicon substrate (HRS) for L and S bands with resonating frequencies of 1.575 and 3.4 GHz. Both configurations have return loss that is better than 20 dB and an insertion loss of around 6 dB; isolation better than 30 dB was achieved for both models.

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“…If the samples have dimensions comparable to the wavelength of the microwave. these problems are often studied with the finite element or the effective dielectric constant method [20]. Recently, combinations of network analysis with other theoretical approaches have been reported 121 J. Xu Shanjia introduced a method which combines rigorous multi-mode matching with the multi-mode network theory [22).…”

Section: Transmission Coefficientmentioning

confidence: 99%

Contactless measurement of the conductivity of II?VI epitaxial layers by means of the partially filled waveguide method

et al. 1992

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Abstract. We report the contactless determination of the conductivity, the mobility and the carrier concentration of II-VI semiconductors by means of the technique of the partially filled waveguide at a microwave frequency of 9 GHz. The samples are CdllgTe epitaxial layers, grown on CdZnTe substrates by molecular beam epitaxy. The conductivity is determined from the transmission coefficient of the sample in the partially filled waveguide. For the analysis of the experimental data, the complex transmission coefficient is calculated by a rigorous multi-mode matching procedure. By varying the conductivity of the sample, we obtain an optimum fit of the calculated data to the experimental results. Comparison with conductivity data determined by the van der Pauw method shows that our method allows to measure the conductivity with good accuracy. The behaviour of the transmission coefficient of the sample is discussed in dependence on the layer conductivity, the layer thickness and the dielectric constant of the substrate. The calculations require to consider in detail the distribution of the electromagnetic fields in the sample region. The usual assumption of a hardly disturbed TEIO mode cannot be used in our case.By applying a magnetic field in extraordinary Voigt configuration. galvanomagnetic measurements have been carried Qut which yield the mobility and thus the carrier concentration. These results are also in good agreement with van der Pauw transport measurements.. 72.80.Ey, 78.70.Gq [here is a growing interest in II-VI semiconductors bepuse of their potential applications as devices in the areas ~f opto-electronics and photonics. Their bandgap spans a !wide range from the infrared (CdHgTe) to the violet (ZnS). (consequently, some members of this semiconcutors family lire used as sensitive infrared detectors while others will be iauitable for the realization of LED's etc. with light emission pn the blue part of the visible spectrum. But a number of F hnical problems have to be overcome before we know . w to fabricate reliable devices of this kind. A major step i towards solving these problems is the growth of high quality epitaxial films by means of a new, recently developed growth process, namely photoassisted molecular beam epitaxy (PAMBE) [1,2]. The growth of such films has always been difficult because of the tendency of U-VI compounds to incorporate local defects such as vacancies, interstilials and impurities [3). After the growth of the epitaxial layers, it is absolutely necessary to characterize the samples, i.e. to measure the conductivity, the Hall effect etc., in order to control and optimize their quality with sufficient accuracy in a short time. The knowledge of the electrical transport parameters is especially required in the field of device fabrication. Unfortunately, that is often hampered by the fact that it is difficult or sometimes even impossible to obtain good ohmic contacts. One reason for this is the well known tendency of self-compensation in II-VI compounds.To avoid these problems. a...

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New Waveguide Structures for Millimeter-Wave and Optical Integrated Circuits

Cited by 180 publications

References 3 publications

Analysis of Open Dielectric Waveguides Using Mode-Matching Technique and Variational Methods

Analysis of Open Dielectric Waveguides Using Mode-Matching Technique and Variational Methods

Design and EM Analysis of Dual Band Hilbert Curve Based Wilkinson Power Divider

Contactless measurement of the conductivity of II?VI epitaxial layers by means of the partially filled waveguide method

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