New Write Shift Compensation Method Modified for Optical Disk Systems to Which Partial Response Maximum Likelihood (PRML) Detection Is Applied

Ogawa, Akihito; Nagai, Yoshinori; Watabe, Kazuo; Iwata, Kazutoshi; Maruyama, Sumitaka; Nagasato, Makoto; Kashihara, Yutaka

doi:10.1143/jjap.42.919

Cited by 8 publications

(3 citation statements)

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“…[1][2][3][4][5][6][7][8] Write strategy optimization methods to realize stable optical disc recording have been actively investigated. [9][10][11][12][13][14][15][16][17][18][19][20][21] The optical disc drives usually determine the write strategy for a disc at the start of the recording operation and subsequently use the determined write strategy until the recording operation is completed. On the other hand, some commercial discs already released into the market have a variety of recording characteristics depending on the recording position in the radial direction.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Write Strategy Optimization Method for Optical Discs

Takeshita

Kishigami

Ikuta

et al. 2012

Jpn. J. Appl. Phys.

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The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD) were investigated. Intentionally tensile strained sapphire substrates were prepared by the implantation of 2.4 MeV energy Cl þ and As þ -ions with a 10 15 cm À2 dose where the projection ranges (R p ) were 1.16 mm and 0.95 mm, respectively. It was found from Raman spectroscopy that the compressive stress normally existed in the GaN epilayer/sapphire was decreased by the use of a Cl þ -ion-implanted sapphire substrate. The intentionally tensile strained sapphire surface can result in a superior crystalline GaN epilayer on top of it. However, excessively roughened and modified surface by As þ -ions degraded the GaN epilayer. Not only the ionic radius but also the chemical species of implanted ions in sapphire affected the crystal quality of GaN epilayers. Therefore, we concluded that the properly tensile-strained sapphire (0001) substrate could improve the properties of GaN epilayers grown by MOCVD.

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Section: Introductionmentioning

confidence: 99%

Real-Time Write Strategy Optimization Method for Optical Discs

Takeshita

Kishigami

Ikuta

et al. 2012

Jpn. J. Appl. Phys.

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“…Applying the PRML to edge-shift detection is effective for solving this problem. 11) We have proposed an edge-shift detection method based on the PRML for high-speed recordings. 12) However, it is not applicable to high density recording because it is designed for the standard recording density of BD.…”

Section: Introductionmentioning

confidence: 99%

New Edge-Shift Detection Method for Write Strategy Optimization in High-Density Optical Disc Recording

Kurokawa

Minemura

Kikukawa

et al. 2011

Jpn. J. Appl. Phys.

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We propose a sophisticated edge-shift detection method based on the partial response maximum likelihood technology for high-density optical disc recordings. One of the major features is the capability of detecting the edge shifts of short marks that cannot be optically resolved. Another feature is that measured values are not affected by the signal-to-noise ratio in a readout signal. This ensures drive compatibility. Furthermore, the edge-shift values are sorted and evaluated corresponding to the write pulse control parameters for simplifying write strategy optimization. These features make write strategy optimization possible under an areal recording density of over 30 Gbyte/layer.

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“…In this paper, a new parameter is presented: path metric (PM) value, which can be calculated as easy as , to evaluate RF quality and can be used in the optimal-power-control (OPC) of the next generation optical storage system with PRML. 2,3)…”

Section: Introductionmentioning

confidence: 99%