Newly-Developed Cu(NbZrN&lt;sub&gt;x&lt;/sub&gt;) Copper-Alloy Films for Microelectronic Manufacture Advancement

Lin, Cherng‐Yuan

doi:10.2320/matertrans.mt-m2021237

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…It is essential to explore a better method other than using the mentioned barrier. Thus, a barrierless structure has become an unavoidable direction for development [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Wang,

Guo,

Dong

et al. 2024

Coatings

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In this study, the barrier properties and diffusion behavior of carbon-doped Cu(Ni) alloy film were investigated. The films were fabricated using magnetron sputtering on a barrierless silicon substrate. X-ray diffraction patterns and electric resistivity results demonstrated that the barrierless Cu(NiC) alloy films remained thermally stable up to 650 °C. Transmission electron microscopy images provided the presence of a self-formed diffusion layer between the Cu(NiC) alloy and Si substrate. The effect of carbon-doped atoms on the diffusion behavior of the Cu(NiC) films was analyzed by X-ray photoemission spectroscopy depth profile. Results revealed that carbon doping can improve the barrier properties of barrierless Cu(Ni) film. Moreover, X-ray photoemission spectroscopy was performed to examine the chemical states of the self-formed layer at the Cu(NiC)/Si interface. The self-formed diffusion layer was found to consist of Cu metal, Ni metal, Si, Cu2O, NiO, and SiO2.

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“…It is essential to explore a better method other than using the mentioned barrier. Thus, a barrierless structure has become an unavoidable direction for development [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Wang,

Guo,

Dong

et al. 2024

Coatings

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A newly developed Cu(Rh) alloy film and its characteristics and applications

Lin

2024

AAPPS Bull.

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A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere. The new films are next annealed at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 μΩ cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 μΩ after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is then thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11 ~ 12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against Staphylococcus aureus (S. aureus) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8 nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like. Graphical Abstract A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere and then annealing the new films at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 mW cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 mW after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is next thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11~12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against Staphylococcus aureus (S. aureus) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8-nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like.

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Phase Equilibria, Thermodynamics and Solidified Microstructure in the Copper–Zirconium–Yttrium System

Jing

Liu

et al. 2023

Materials

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A copper alloy with the addition of zirconium and yttrium is an attractive high strength and high conductivity (HSHC) copper alloy. The study of the solidified microstructure, thermodynamics and phase equilibria in the ternary Cu–Zr–Y system is expected to provide new insight into designing an HSHC copper alloy. In this work, the solidified and equilibrium microstructure and phase transition temperatures in the Cu–Zr–Y ternary system were studied by X-ray diffraction (XRD), electron probe microanalysis (EPMA) and differential scanning calorimeter (DSC). The isothermal section at 973 K was experimentally constructed. No ternary compound was found, while the Cu6Y, Cu4Y, Cu7Y2, Cu5Zr, Cu51Zr14 and CuZr phases substantially extended into the ternary system. According to the experimental phase diagram data from the present work and the literature, the Cu–Zr–Y ternary system was assessed using the CALPHAD (CALculation of PHAse diagrams) method. The isothermal sections, vertical section and liquidus projection calculated by the present thermodynamic description agree well with the experimental results. This study not only establishes a thermodynamic description of the Cu–Zr–Y system, but also contributes to the design of a copper alloy with the required microstructure.

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Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Cited by 3 publications

References 20 publications

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

A newly developed Cu(Rh) alloy film and its characteristics and applications

Phase Equilibria, Thermodynamics and Solidified Microstructure in the Copper–Zirconium–Yttrium System

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