Newly Synthesized Nonvacuum Processed High‐k Polymeric Dielectrics with Carboxyl Functionality for Highly Stable Operating Printed Transistor Applications

Kwon, Hyeokjin; Ye, Heqing; Shim, Kyuwon; Girma, Henok Getachew; Tang, Xiaowu; Lim, Bogyu; Kim, Yejin; Lee, Jihoon; Park, Jin Young; Jung, Seo‐Hyun; Park, Jong Mok; Jung, Yu Jin; Hwang, Do‐Hoon; Kong, Hoyoul; Kim, Se Hyun

doi:10.1002/adfm.202007304

Cited by 34 publications

(26 citation statements)

References 60 publications

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“…Based on previous studies, EHD jet printing under an electrostatic force‐assisted mode was selected to prepare a GI layer that could exhibit uniform and excellent insulating properties. [ 7,12,13 ] To manufacture the GI layer using this printing, a 5‐wt% GI ink was prepared. In detail, PVA 5 wt% was dissolved in deionized water and IPA at a weight ratio of 100:5, after which the PMF crosslinking agent (weight ratio of 0, 5, 10, and 15 to PVA) was added.…”

Section: Resultsmentioning

confidence: 99%

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Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

et al. 2021

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Organic printable dielectric layers are required for next‐generation electronic circuits, particularly those used as gate insulators (GIs) in organic field‐effect transistors (OFETs). Herein, optimized electrohydrodynamic (EHD) jet printing with an electrostatic force‐assisted mode is suggested for the fabrication of polyvinyl alcohol (PVA)‐based dielectric patterns after careful consideration of the ink system. The PVA molecules maintain good solubility in polar solvents, even when a crosslinking agent is added, which enables a continuous PVA jet stream with a width smaller than the diameter of the nozzle to be stably obtained. Subsequent EHD printing produces uniform PVA patterns with a smooth surface morphology suitable for the crystal growth of overlying organic semiconductors. The addition of a crosslinking agent in PVA results in direct GI patterns that exhibit superior insulating properties with high dielectric strength as compared with PVA without crosslinking agents. The OFETs with PVA‐based GIs prepared with EHD printing show stable operation with low gate leakage currents. In addition, the feasibility of EHD‐printed PVA layers is demonstrated for application as GIs in organic complementary logic gates.

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Section: Resultsmentioning

confidence: 99%

“…Accordingly, finding materials that satisfy these GI characteristics should be conducted to investigate the feasibility of EHD printing of GIs in organic integrated circuits. [ 13 ]…”

Section: Introductionmentioning

confidence: 99%

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

et al. 2021

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“…To compensate for this, it was attempted to obtain higher C I values by thinning GI layers with a lower concentration solution (3 wt% of FPVDF-HFP and 1 wt% of FCOC and AGPTi) . Utilizing this processing condition, C I values were yielded as 100 and 97 nF/cm 2 for FCOC+FPVDF (p-type) and AGPTi+FPVDF (n-type), respectively, in which the values are suitable for low-voltage operating devices. , Therefore, OFETs, inverters, NAND, and NOR gates fabricated with this high C I -printed GI layers reveal reliable and typical operation behavior under low-voltage operation conditions as ±5 V (Figure ), which is similar to the aforementioned devices. As a result, we believe that processing method we proposed can definitely help in the manufacturing method of practical devices and next-generation devices such as flexible electronics.…”

Section: Resultsmentioning

confidence: 99%

Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices

Tang

Kwon

et al. 2020

ACS Appl. Mater. Interfaces

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Direct drawing techniques have contributed to the ease of patterning soft electronic materials, which are the building blocks of analog and digital integrated circuits. In parallel with the printing of semiconductors and electrodes, selective deposition of gate insulators (GI) is an equally important factor in simplifying the fabrication of integrated devices, such as NAND and NOR gates, and memory devices. This study demonstrates the fabrication of six types of printed GI layers (high/low-k polymer and organic–inorganic hybrid material), which are utilized as GIs in organic field-effect transistors (OFETs), using the electrostatic-force-assisted dispensing printing technique. The selective printing of GIs on the gate electrodes enables us to develop practical integrated devices that go beyond unit OFET devices, exhibiting robust switching performances, non-destructive operations, and high gain values. Moreover, the flexible integrated devices fabricated using this technique exhibit excellent operational behavior. Therefore, this facile fabrication technique can pave a new path for the production of practical integrated device arrays for next-generation devices.

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“…High-performance dielectric materials are urgently needed for advanced electrical and power applications, such as energy-storage devices − and transistors. − Compared with traditional ceramic dielectric materials and ceramic/polymer composited dielectrics, all-organic polymer dielectric materials are more attractive because of their lightweight, low cost, low dielectric loss (tan δ), and high energy efficiency . However, the relative dielectric constant (ε r ) or permittivity of most commercially available polymers is too low to meet the requirements of high energy density or miniaturization of modern electronic components .…”

Section: Introductionmentioning

confidence: 99%

All-Organic Polymer Dielectrics Containing Sulfonyl Dipolar Groups and π–π Stacking Interaction in Side-Chain Architectures

Chen

et al. 2021

Macromolecules

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Although polymer dielectrics show wide application prospects in electronic and electrical fields, a low relative dielectric constant and a low energy density restrict their rapid developments. To overcome these shortcomings, a strategy is proposed to facilitate orientational polarization through the incorporation of the π−π stacked biphenyl side groups in dipolar polymers. In this study, sulfonyl-containing poly(norbornene)s with and without biphenyl groups were synthesized by ring-opening metathesis polymerization, denoted as PBTMD-SO 2 and PTMD-SO 2 , respectively. Their dielectric behaviors and energy-storage properties were investigated. The dielectric constant of PBTMD-SO 2 with the biphenyl side groups was as high as 11.1 at 25 °C and 1 kHz, which was nearly 35% higher than that of PTMD-SO 2 due to the stronger orientational polarization. In addition, the dielectric loss in the range of 1 kHz to 1 MHz increased from 0.061 to 0.172 for PTMD-SO 2 and from 0.075 to 0.110 for PBTMD-SO 2 . Electric displacement−electric field loops studies indicated that the discharge energy density of PBTMD-SO 2 reached 1.69 J/ cm 3 at 180 MV/m with a high efficiency of 87.1%, which exceeded the discharge energy density of 1.29 J/cm 3 for PTMD-SO 2 at 200 MV/m. This work offers a new idea for the design of high-performance dielectric polymers.

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Newly Synthesized Nonvacuum Processed High‐k Polymeric Dielectrics with Carboxyl Functionality for Highly Stable Operating Printed Transistor Applications

Cited by 34 publications

References 60 publications

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices

All-Organic Polymer Dielectrics Containing Sulfonyl Dipolar Groups and π–π Stacking Interaction in Side-Chain Architectures

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