News on sputter theory: Molecular targets, nanoparticle desorption, rough surfaces

Urbassek, Herbert M.; Anders, Christian; Rosandi, Yudi

doi:10.1016/j.nimb.2010.12.010

Cited by 14 publications

(5 citation statements)

References 33 publications

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“…This criterion is in agreement with that used by us in earlier work for subsurface channeling under the Pt (111) surface. 24 The maximum channeling length which we can detect amounts to 200Å, in accordance with the size of our simulation crystallite.…”

Section: Ion Trajectories and Subsurface Channelingsupporting

confidence: 85%

“…In previous work, 7,8,23,24 we determined that ions interact with the step-and can enter a subsurface channel-only if their impact point is within a region −x c < ξ < 0; that is, not farther than the critical distance x c away from the step edge. For a flat terrace, x c is given by a simple geometrical criterion, 25…”

Section: The 110 Channelsmentioning

confidence: 99%

“…This behavior has also been found in the sputtering of Pt at grazing incidence. 8,24 The peak closer to the step edge (ξ ∼ = −10Å) is connected to direct-hit events, in which the ion directly collides with step-edge atoms, leading to abundant sputtering. The more distant peak at ξ ∼ = −x c is due to so-called indirect hits, in which the ion is first reflected from the lower terrace and then hits the step edge.…”

Section: Sputter Yieldsmentioning

confidence: 99%

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Glancing ion incidence on Si(100): Influence of surface reconstruction on ion subsurface channeling

Rosandi

Urbassek

2012

Phys. Rev. B

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We demonstrate that a Si target may exhibit the phenomenon of subsurface channeling for glancing incidence ions. To this end, we perform molecular-dynamics simulations of 3 keV Ar + ion impact at grazing incidence (83 • toward the surface normal) on a Si (100) surface. Both an unreconstructed and a (2 × 1) dimer-reconstructed surface are investigated. In both cases, the ion is reflected from the flat terrace and creates neither damage nor sputtering. The situation changes when a surface step is introduced on the surface; ion incidence in the vicinity of the step induces both damage and sputtering. We find that the phenomenon of subsurface channeling plays a dominant role in damage creation at the step edge. Subsurface channels aligned in the 110 direction are created under the reconstructed surface; they run parallel to the dimer rows. If the ion incidence geometry is favorable-incidence azimuth aligned along 110 and the ion approaching an unbonded B step-the ion can enter these channels. Without surface reconstruction no subsurface channeling can occur. Subsurface-channeled ions generate peculiar surface damage patterns which may allow their identification in experiment.

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Section: Ion Trajectories and Subsurface Channelingsupporting

confidence: 85%

Section: The 110 Channelsmentioning

confidence: 99%

Section: Sputter Yieldsmentioning

confidence: 99%

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Glancing ion incidence on Si(100): Influence of surface reconstruction on ion subsurface channeling

Rosandi

Urbassek

2012

Phys. Rev. B

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“…These boundary conditions are also used during the simulation. These conditions are analogous to those used by us in previous surface channeling simulations [12,28].…”

Section: Methodsmentioning

confidence: 85%

Subsurface channeling of keV ions between graphene layers: Molecular dynamics simulation

2015

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Using molecular dynamics simulation, we study the impact of 3 keV Xe ions at glancing incidence on a β-SiC (111) surface covered by graphene. On top of a full graphene layer covering the substrate, we add a graphene half-layer; the step forming where the half-layer terminates allows the entrance of glancing-incidence ions into a subsurface channel between graphene layers. We find a high channeling probability which leads to only little sputtering and damage formation. Typically, vacancy defects are formed at periodic intervals when the ion hits the uppermost graphene layer from below. Extended damage occurs when the ion hits the step edge itself. There we find several kinds of defects varying from adatoms over the formation of sp 1 -bonded chains to hillocks.

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“…(d) Popcorn mechanism: If the projectile energizes the nanoparticle without destroying it, the nanoparticle is suddenly heated to a high temperature. As a result, the desorption of the heated nanoparticle may occur [17].…”

Section: Resultsmentioning

confidence: 99%

Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11MeV C603+ impacts

Kitayama

Nakajima

Suzuki

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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News on sputter theory: Molecular targets, nanoparticle desorption, rough surfaces

Cited by 14 publications

References 33 publications

Glancing ion incidence on Si(100): Influence of surface reconstruction on ion subsurface channeling

Glancing ion incidence on Si(100): Influence of surface reconstruction on ion subsurface channeling

Subsurface channeling of keV ions between graphene layers: Molecular dynamics simulation

Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11MeV C603+ impacts

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