Next Generation IGBT and Package Technologies for High Voltage Applications

Kopta, A.; Rahimo, Munaf; Corvasce, Chiara; Andenna, Maxi; Dugal, Franc; Fischer, Fabian; Hartmann, Samuel; Baschnagel, Andreas

doi:10.1109/ted.2017.2655485

Cited by 32 publications

(12 citation statements)

References 10 publications

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“…The initial prototype device was a 3300V module, but in 2013 a 6500V HiPak module was produced [6]. The overall module performance (output current) of the BIGT compared to a separate IGBT/diode solution is up to 15% higher [36].…”

Section: A Bigt (Bi-mode Integrated Gate Transistor)mentioning

confidence: 99%

“…As a result, the gate voltage is required to be below the MOS channel threshold so that pwell injection remains high [6], [38]. The optimum control has the channel off during diode conduction mode, with it turned on towards the end of the diode conduction time, before being turned-off again prior to diode reverse recovery to prevent a short circuit [36]. As a consequence of this complex gate drive scheme to prevent unnecessarily high conduction losses and to optimise switching performance, operation of the device is more difficult, making it less attractive to application circuit designers [6].…”

Section: A Bigt (Bi-mode Integrated Gate Transistor)mentioning

confidence: 99%

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Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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Section: A Bigt (Bi-mode Integrated Gate Transistor)mentioning

confidence: 99%

Section: A Bigt (Bi-mode Integrated Gate Transistor)mentioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…The drift region has a thickness of 370 μm and a doping level of 1·10 13 cm −3 . These values have been selected to achieve a blocking voltage of 3,300 V. The trench cell has an n-type enhancement layer surrounding the p-well layer, which is a well-established solution to improve the trade-off between on-state drop and switching losses [16]. The p-well layer depth is 2 μm and the n-enhancement layer extends up to 5 μm.…”

Section: A Igbt Designmentioning

confidence: 99%

“…Electrical failures in power semiconductor devices are a cause of concern, especially under severe overloads, such as short circuits, where the device operates at its limits [4]. Insulated-Gate Bipolar Transistors (IGBTs) have shown good capability of surviving short circuits, for a certain limited of time [5]. Nevertheless, as the IGBT technology evolves, towards achieving high power density and further optimization of the technology curve, the stable operation of the IGBT under short-circuit may be compromised.…”

Section: Introductionmentioning

confidence: 99%

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Reigosa

Iannuzzo

Rahimo

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Abstract-In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has been shaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigating high-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

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“…2a), and the Soft-Punch-Through (SPT) IGBT with a trench cell and additional carrier enhancement at the emitter (Fig. 2b) [17]. The two IGBT cells are based on the SPT concept having the same buffer design and drift region thickness.…”

Section: Introductionmentioning

confidence: 99%

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Reigosa

Iannuzzo

Rahimo

et al. 2018

IEEE Trans. Power Electron.

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Abstract-In this paper, the oscillation mechanism limiting the ruggedness of IGBTs is investigated through both circuit and device analysis. The work presented here is based on a timedomain approach for two different IGBT cell structures (i.e., trench-gate and planar), illustrating the 2-D effects during one oscillation cycle. It has been found that the gate capacitance varies according with the strength of the electric field near the emitter, which in turn leads to charge-storage effects associated with low carrier velocity. For the first time, it has been discovered that a parametric oscillation takes place during the short-circuit in IGBTs, whose time-varying element is the Miller capacitance, which is involved in the amplification mechanism. This hypothesis has been validated through simulations and its mitigation is possible by increasing the electric field at the emitter of the IGBT with the purpose of counteracting the Kirk Effect.

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Next Generation IGBT and Package Technologies for High Voltage Applications

Cited by 32 publications

References 10 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

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