Next Generation of Photovoltaics

López, Ana Belén Cristóbal; Vega, Antonio Martí; López, Alfonsa García

doi:10.1007/978-3-642-23369-2

Cited by 35 publications

(6 citation statements)

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“…Although MJPV cells have the highest efficiency in respect of the solar concentration, the market demand for them is not high due to their high production cost and to MJPV constituents being less available. MJPV cells are currently economically feasible only if the concentration ratio is sufficient to minimize the cell area and offset its initial cost [102].…”

Section: Economic Aspects For High Concentration Ratio Cpvtsmentioning

confidence: 99%

Advances and limitations of increasing solar irradiance for concentrating photovoltaics thermal system

Alzahrani

Shanks

Mallick

2021

Renewable and Sustainable Energy Reviews

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Section: Economic Aspects For High Concentration Ratio Cpvtsmentioning

confidence: 99%

Advances and limitations of increasing solar irradiance for concentrating photovoltaics thermal system

Alzahrani

Shanks

Mallick

2021

Renewable and Sustainable Energy Reviews

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“…Different MJSCs coupled with CPV system exhibits an increase in the cell efficiency of up to 1000 suns, and then the cell efficiency drops due to the internal resistive losses. 45 Since the range in this study is between 2000 and 10 000 suns, the state-of-thearts MJSC not efficiently compatible to safely operate and produce a high-power output under ultrahigh GC. Thus, this study relies on future solar cell architectures (vertical-tunnel-junction [VTJ]) which can uphold the cell at an efficiency of 28.4% at 15 000 suns with no degradation.…”

Section: Assumptions and Boundary Conditionsmentioning

confidence: 93%

Optimization and feasibility analysis of a microscale pin‐fins heat sink of an ultrahigh concentrating photovoltaic system

et al. 2020

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Nowadays, the most recent optical configuration based on Cassegrain and Fresnel lens designs of concentrator photovoltaic(CPV) has shown a race to achieve the ultrahigh concentration ratio. Still, none of those has experimentally shown an optical concentration ratio (GC) beyond 2000 suns. This is because their energy concentration ratios are challenged by the excessive temperature raised throughout the optical stages, which diminishes the efficiency of the solar cell. In this context, this research work aims to numerically investigate a microscale pin-fins heat sink configuration to enhance the thermal performance and the cost-competitivity of ultrahigh CPV thermal receiver. The impacts of the solar cell area, cell efficiency, and heat sink's material have been analyzed and discussed. The results showed that a circular pin-fins heat sink could accomplish a drop of 23.28% in the maximum operating cell temperature at 10 000 suns for cell area of 1 × 1 mm 2 relatively compared to the conventional flat-plate heat sink. Furthermore, for a circular pin-fins heat sink with a cell area of 2 × 2 mm 2 , the cell temperature started exceeding the safe operating range of temperature (80 C) at 8000 suns with an average temperature of 96.1 C and reaching a maximum of 113.91 C at 10 000 suns. A gradient temperature on the planar direction of the aluminum circular pin-fins heat sink was about 1.187 C at 10 000 suns whereas 0.703 C was recorded in the case of a copper circular pin-fins heat sink. The circular pin-fins heat sink showed the highest thermal performance resulting in maintaining the solar cell temperature within its safe operating range even beyond 10 000 suns. From an economic point of view, aluminum circular pin-fins heat sink has been found to be less costly than the copper one. Finally, it was found that at 8000 suns, the flat-plate heat sink cost is more expensive than the traditional pin-fins heat sink by 14.7%, where the flat-plate heat sink becomes the worst economic configuration at 10 000 suns. At that concentration ratio, the cost has increased by 43.38%, 5.75%, and 10.61% compared to the traditional pin-fins heat sink, cylindrical pin-fins heat sink, and circular pin-fins heat sink, respectively.

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“…Despite the fact that from a theoretical point of view, the principle of operation of IBSC-type cells has been comprehensively described in [18], the problem of practical implementation of this concept in the form of a semiconductor material with an intermediate energy bandwidth, ensuring effective conversion of solar energy into electricity, still remains valid. Therefore, the mechanism of the formation of intermediate bands in semiconductors, as well as its utilitarian aspects, is the subject of many research papers, including a few selected current research directions based on the use of ion implantation [19][20][21][22][23][24][25]. One of them is an approach that includes the use of ion implantation to introduce dopants of very high concentration into the semiconductor substrate [25] or subjecting the silicon layer to implantation with metal ions of very high doses [20,23].…”

Section: Current Research Directions Using Ion Implantationmentioning

confidence: 99%

“…Therefore, the mechanism of the formation of intermediate bands in semiconductors, as well as its utilitarian aspects, is the subject of many research papers, including a few selected current research directions based on the use of ion implantation [19][20][21][22][23][24][25]. One of them is an approach that includes the use of ion implantation to introduce dopants of very high concentration into the semiconductor substrate [25] or subjecting the silicon layer to implantation with metal ions of very high doses [20,23].…”

Section: Current Research Directions Using Ion Implantationmentioning

confidence: 99%

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Węgierek

Pastuszak

2021

Materials

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The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of ρ = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels ∆E = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

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Next Generation of Photovoltaics

Cited by 35 publications

References 0 publications

Advances and limitations of increasing solar irradiance for concentrating photovoltaics thermal system

Advances and limitations of increasing solar irradiance for concentrating photovoltaics thermal system

Optimization and feasibility analysis of a microscale pin‐fins heat sink of an ultrahigh concentrating photovoltaic system

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

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