nextnano: General Purpose 3-D Simulations

Birner, Stefan; Zibold, T.; Andlauer, Till F. M.; Kubis, Tillmann; Sabathil, M.; Trellakis, A.; Vogl, P.

doi:10.1109/ted.2007.902871

Cited by 592 publications

(454 citation statements)

References 22 publications

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“…The conduction and valence band profiles of the structures were calculated using the commercially available device simulation package nextnano 3 [16] using their experimentally determined structural and compositional parameters. The calculated conduction band profiles for samples 1QW, 3QW and 15QW are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Christian

Hammersley

Davies

et al. 2016

Phys. Status Solidi C

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We report on the effects of varying the number of quantum wells (QWs) in an InGaN/GaN multiple QW (MQW) structure containing a 23 nm thick In0.05Ga0.95N prelayer doped with Si. The calculated conduction and valence bands for the structures show an increasing total electric field across the QWs with increasing number of QWs. This is due to the reduced strength of the surface polarisation field, which opposes the built‐in field across the QWs, as its range is increased over thicker samples. Low temperature photoluminescence (PL) measurements show a red shifted QW emission peak energy, which is attributed to the enhanced quantum confined Stark effect with increasing total field strength across the QWs. Low temperature PL time decay measurements and room temperature internal quantum efficiency (IQE) measurements show decreasing radiative recombination rates and decreasing IQE, respectively, with increasing number of QWs. These are attributed to the increased spatial separation of the electron and hole wavefunctions, consistent with the calculated band profiles. It is also shown that, for samples with fewer QWs, the reduction of the total field across the QWs makes the radiative recombination rate sufficiently fast that it is competitive with the efficiency losses associated with the thermal escape of carriers. (© 2016 The Authors. Phys. Status Solidi C published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Christian

Hammersley

Davies

et al. 2016

Phys. Status Solidi C

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“…4.4. The shape of the wavefunction at the respective filling factors was determined by solving the Schrödinger and Poisson equations iteratively using the software nextnano++ [23]. The resonance at = 2 is simply fit by a Gaussian lineshape: In the case of an unpolarized electron system the Knight shift is zero, and the resonance remains symmetric irrespective of the density distribution.…”

Section: Discussion Of the Nmr Lineshapementioning

confidence: 99%

“…2.2 shows the probability density of the two wavefunctions being lowest in energy for the case of a 30 nm-wide QW. The calculations were done by solving the Schrödinger and Poisson equations self-consistently using the software nextnano++ [23]. The samples studied in this thesis are designed in such a way that only the lowest subband is occupied.…”

Section: Figure 21 Schematic Of the Conduction Band Profile Along Thmentioning

confidence: 99%

Spin and Charge Ordering in the Quantum Hall Regime

Frieß

2016

Springer Theses

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“…In order to understand the electric field distribution leading to this giant screening effect, 3D calculations of the NW strain state, band diagram and quantum confined states were performed using the NEXTNANO3 software [47] with the material parameters described in Ref. [48].…”

Section: Discussionmentioning

confidence: 99%

Long-lived excitons in GaN/AlN nanowire heterostructures

et al. 2015

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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.

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nextnano: General Purpose 3-D Simulations

Cited by 592 publications

References 22 publications

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Spin and Charge Ordering in the Quantum Hall Regime

Long-lived excitons in GaN/AlN nanowire heterostructures

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