Ni and Ti silicide oxidation for CMOS applications investigated by XRD, XPS and FPP

Rahman, Md. Khalilur; Nemouchi, F.; Chevolleau, T.; Gergaud, P.; Yckache, K.

doi:10.1016/j.mssp.2017.06.025

Cited by 12 publications

(7 citation statements)

References 20 publications

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“…The peaks at 854.1 eV for Ni 2p3/2 , 67.4 eV for Ni 3p3/2 , and 99.6 eV for Si 2p correspond to the formation of NiSi phase, [25,31] while the peaks at 854.6 eV for Ni 2p3/2 and 100.2 eV for Si 2p correspond to the formation of NiSi 2 phase. [31][32] In the Raman spectrum, two Raman peaks at 216 and 302 cm −1 could be observed, which come from the Raman scattering of NiSi and NiSi 2 phases, respectively (Figure S5, Supporting Information). These results collectively verify the co-existence of NiSi and NiSi 2 phases in the NiSi x layer.…”

Section: Resultsmentioning

confidence: 99%

Organic–Inorganic Hybrid Shortwave Infrared Up‐conversion Imaging Devices with Ultra‐high Refresh Rate and Excellent Resolution

Zhang

Ding

et al. 2023

Adv Materials Technologies

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Shortwave infrared (SWIR) imaging devices have gained increasing importance in various fields, including security monitoring, biomedical imaging, advanced driver assistance, and semiconductor industry. However, complex technological processes of epitaxial growth and flip‐chip bonding hinder the development of high‐performance and low‐cost SWIR imaging devices. Herein, a novel organic–inorganic hybrid optical up‐conversion (OUC) imaging device by stacking a phosphorescent organic light‐emitting diode (OLED) with a NiSix/Si Schottky barrier diode (SBD) is developed. The pyramidal microstructures of silicon are utilized to greatly enhance light absorption of the NiSix/Si SBD, enabling the device to respond to a broadband SWIR light of 1064, 1310, and 1550 nm that are beyond the bandgap limit of silicon. Significantly, the device demonstrates excellent up‐conversion imaging behaviors at SWIR light with an ultra‐fast refresh rate of over 3000 Hz and a high‐resolution imaging capability of 508 ppi. This work paves the way toward the fabrication of high‐performance, low‐cost silicon‐based OUC devices for SWIR imaging applications.

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Section: Resultsmentioning

confidence: 99%

Organic–Inorganic Hybrid Shortwave Infrared Up‐conversion Imaging Devices with Ultra‐high Refresh Rate and Excellent Resolution

Zhang

Ding

et al. 2023

Adv Materials Technologies

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“…Studies indicate that there are competing oxidation reactions between formation of

\left(\text{NiO}\right)_{x}

and

\left(\text{SiO}\right)_{\text{z}}

, that might depend on the specific nickel silicide composition and doping. [ 38,39 ] The formation of nickel silicides by a Ni layer deposited on a c‐Si volume material usually occurs sequentially via the following reaction path: [ 40 ] 1) Ni is present on the c‐Si substrate at room temperature. 2) At temperature

T \left(&amp;amp;amp;amp;amp;amp;amp;amp;amp;gt; 200\right)^{\circ} \text{C}

, nickel‐rich

\left(\text{Ni}\right)_{2} \text{Si}

forms at the Ni/Si interface until all of the Ni is reacted at

T sim \left(300\right)^{\circ} \text{C}

.…”

Section: Discussionmentioning

confidence: 99%

“…Studies indicate that there are competing oxidation reactions between formation of NiO x and SiO z , that might depend on the specific nickel silicide composition and doping. [38,39] The formation of nickel silicides by a Ni layer deposited on a c-Si volume material usually occurs sequentially via the following reaction path: [40] 1) Ni is present on the c-Si substrate at room temperature. Temporarily, both silicide phases are present simultaneously.…”

Section: Ag/nio X /(Ni)/poly-si/c-si Contact Samplesmentioning

confidence: 99%

Enhancement of NiO_x/Poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer

Lange

Fett

Kabaklı

et al. 2023

Physica Status Solidi (a)

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Nickel oxide (NiOx$\left(\text{NiO}\right)_{x}$) is a promising hole transport material for perovskite/Si tandem solar cells. Various silicon cell architectures may be used as bottom cells. The polycrystalline (poly‐Si) p+false/n+$\left(\text{p}\right)^{+} / \left(\text{n}\right)^{+}$ tunnel diode is expected to be a high‐efficiency interconnection scheme between the two subcells of monolithic tandems in p‐i‐n configuration with a high thermal budget, excellent passivation properties, and low contact resistivity. However, NiOx$\left(\text{NiO}\right)_{x}$ is then interfaced to poly‐Si(p+$\left(\text{p}\right)^{+}$) and the chemical integrity of the interface due to the necessity of annealing treatments has to be questioned. For this purpose, the NiOx$\left(\text{NiO}\right)_{x}$/poly‐Si contact resistivity for different annealing temperatures is investigated between 100 and 500 °C, and two different NiOx$\left(\text{NiO}\right)_{x}$ deposition techniques, namely, wet‐chemically applied and sputter‐deposited NiOx$\left(\text{NiO}\right)_{x}$. The values of more than 1 Ω cm2$1 \textrm{ } \Omega \textrm{ } \left(\text{cm}\right)^{2}$ are obtained. The insertion of a nm‐thin metallic Ni interlayer is shown to enable a tremendous decrease of the contact resistivity by 2–3 orders of magnitude. The formation of NiSi2$\left(\text{NiSi}\right)_{2}$ is proven by highly resolved (scanning) transmission electron microscopy ((S)TEM) coupled with energy‐dispersive X‐ray spectroscopy (EDXS). This interfacial engineering approach is expected to provide an effective way of improving the contact properties and integrability of NiOx$\left(\text{NiO}\right)_{x}$ into various tandem cell processes.

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“…health [1]. Nanomaterials are increasingly gaining the attention of not only the scientific community but also the public due to their unique properties, which lead to new and exciting applications [2] [3] [4].…”

Section: Introductionmentioning

confidence: 99%

A Review on Zinc Sulphide Thin Film Fabrication for Various Applications Based on Doping Elements

Shakil¹,

Das²,

Rahman³

et al. 2018

MSA

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Zinc Sulfide (ZnS) thin film has attracted increasing attention due to their potential applications in the new generation of nano-electronics and optoelectronics devices. The physical and chemical properties of ZnS have outstanding quality for different applications. Moreover, ZnS doped with various elements are creating a new era for both academic research and industrial applications. So, the optical properties of modified ZnS thin film will help us to find a suitable doping element for convenient deposition which may enhance the conductance and transmitting properties of the film. This review work has been carried out to explore the four-modification elements that constitute Cu, Ni, Co & Fe as descending order of atomic number corresponding to Zn, along with some potential applications considering the recent research work with other doping elements too such as Al, C, Pt etc.

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Ni and Ti silicide oxidation for CMOS applications investigated by XRD, XPS and FPP

Cited by 12 publications

References 20 publications

Organic–Inorganic Hybrid Shortwave Infrared Up‐conversion Imaging Devices with Ultra‐high Refresh Rate and Excellent Resolution

Organic–Inorganic Hybrid Shortwave Infrared Up‐conversion Imaging Devices with Ultra‐high Refresh Rate and Excellent Resolution

Enhancement of NiO_x/Poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer

A Review on Zinc Sulphide Thin Film Fabrication for Various Applications Based on Doping Elements

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Ni and Ti silicide oxidation for CMOS applications investigated by XRD, XPS and FPP

Cited by 12 publications

References 20 publications

Organic–Inorganic Hybrid Shortwave Infrared Up‐conversion Imaging Devices with Ultra‐high Refresh Rate and Excellent Resolution

Organic–Inorganic Hybrid Shortwave Infrared Up‐conversion Imaging Devices with Ultra‐high Refresh Rate and Excellent Resolution

Enhancement of NiOx/Poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer

A Review on Zinc Sulphide Thin Film Fabrication for Various Applications Based on Doping Elements

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Enhancement of NiO_x/Poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer