Ni–Au contacts to p-type GaN – Structure and properties

Smalc-Koziorοwska, Julita; Grzanka, S.; Litwin‐Staszewska, E.; Piotrzkowski, R.; Nowak, G.; Leszczyński, M.; Perlin, P.; Talik, E.; Kozubowski, J.; Krukowski, S.

doi:10.1016/j.sse.2010.01.026

Cited by 28 publications

(22 citation statements)

References 36 publications

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“…Similar meandered structures have been lately observed at GaN(0001)surface [14,15]. In addition, in Monte Carlo simulations such behavior was observed [18].…”

Section: Introductionsupporting

confidence: 81%

“…Meandering often evolves into a regular finger-like structures at the surface. Such regular structures are quite often observed GaN surface morphologies [14,15]. Similar structures are also created at Si(111) surface [17].…”

Section: Introductionsupporting

confidence: 60%

“…The amplitude of meanders of this structure grows up to the limit value and then the step shape does not change during further growth of the crystal. Such surface patterns are seen in the experiment as characteristic regular microscopic structures perpendicular to the initial step direction, ''finger-like'' structures [14,15,17]. We have shown that the crucial role in the explanation of described phenomena plays particle exchange between terraces via step.…”

Section: Discussionmentioning

confidence: 71%

“…It was shown that the characteristic anisotropy of step dynamics can be modeled by using four-body interaction. It was also shown that in addition to step pairing of ½1010 steps, step meandering can be obtained for large system sizes, which is observed in real crystal growth experiments [14,15]. As it was lately discussed in Ref.…”

Section: Introductionmentioning

confidence: 70%

“…Steps can form bunches, but also bend creating characteristic meanders. Instability phenomena, denoted as step meandering, were observed during the growth of different crystal types [8][9][10][11][12][13][14][15]. The experimental data include step meandering in various systems, both metallic and semiconductor.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

Załuska‐Kotur

Krzyżewski

Krukowski

2012

Journal of Crystal Growth

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“…Similar meandered structures have been lately observed at GaN(0001)surface [14,15]. In addition, in Monte Carlo simulations such behavior was observed [18].…”

Section: Introductionsupporting

confidence: 81%

Section: Introductionsupporting

confidence: 60%

Section: Discussionmentioning

confidence: 71%

Section: Introductionmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

Załuska‐Kotur

Krzyżewski

Krukowski

2012

Journal of Crystal Growth

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TiO thin films on GaN(0001)

Wasielewski

Mazur

Grodzicki

et al. 2015

Physica Status Solidi (b)

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Physical features of titanium monoxide layers deposited on pGaN(0001) substrate are reported in this paper. TiO was deposited under ultrahigh vacuum at room temperature. As revealed by scanning tunneling microscopy (STM) the deposit had grainy structure. The X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) studies have shown that, depending on the altered by annealing morphology of the TiO-based film, work function of the system underwent changes and electronic structure of the deposit displayed metallic character. The formation of specific Ti-N and O-N bonds is confirmed by spectroscopic techniques. Electrical conductance of the TiObased/p-GaN interface has been studied by current-sensing atomic force microscopy (CS-AFM) with Au-covered tip. Formation of ohmic nano-contacts on p-GaN surfaces was observed over whole probed surface. The contacts were homogeneous in contrast to the grainy structure of TiO-based film. The results suggest that TiO may be considered as an intermediate semiconducting layer (ISL) useful for p-GaN electrical contact engineering.

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Review of Graphene as a Solid State Diffusion Barrier

Morrow

Pearton

Ren

2015

Small

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Conventional thin-film diffusion barriers consist of 3D bulk films with high chemical and thermal stability. The purpose of the barrier material is to prevent intermixing or penetration from the two materials that encase it. Adhesion to both top and bottom materials is critical to the success of the barrier. Here, the effectiveness of a single atomic layer of graphene as a solid-state diffusion barrier for common metal schemes used in microelectronics is reviewed, and specific examples are discussed. Initial studies of electrical contacts to graphene show a distinct separation in behavior between metallic groups that strongly or weakly bond to it. The two basic classes of metal reactions with graphene are either physisorbed metals, which bond weakly with graphene, or chemisorbed metals, which bond strongly to graphene. For graphene diffusion barrier testing on Si substrates, an effective barrier can be achieved through the formation of a carbide layer with metals that are chemisorbed. For physisorbed metals, the barrier failure mechanism is loss of adhesion at the metal–graphene interface. A graphene layer encased between two metal layers, in certain cases, can increase the binding energy of both films with graphene, however, certain combinations of metal films are detrimental to the bonding with graphene. While the prospects for graphene's future as a solid-state diffusion barrier are positive, there are open questions, and areas for future research are discussed. A better understanding of the mechanisms which influence graphene's ability to be an effective diffusion barrier in microelectronic applications is required, and additional experiments are needed on a broader range of metals, as well as common metal stack contact structures used in microelectronic applications. The role of defects in the graphene is also a key area, since they will probably influence the barrier properties.

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Ni–Au contacts to p-type GaN – Structure and properties

Cited by 28 publications

References 36 publications

Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

TiO thin films on GaN(0001)

Review of Graphene as a Solid State Diffusion Barrier

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