Ni, In and Sb implanted Pt and V catalysed thin-film SnO2 gas sensors

Sulz, Gerd; Kühner, Gerd; Reiter, Helmut; Uptmoor, Gabi; Schweizer, Werner; Löw, Helga; Lacher, M.; Steiner, Klaus

doi:10.1016/0925-4005(93)85216-w

Cited by 28 publications

(6 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[1][2][3] Considerable attention has been focused on thin-film SnO 2 sensors because, in contrast to ceramics technology, thin-film techniques show some advantages such as reliability, lower cost, and compatibility with microtechniques. [4][5][6][7][8][9] In recent years, SnO 2 sensors with sensing elements composed of nanosized crystallites were developed. 10,11 These sensors offer increased sensitivity, technological promise, and a new subject of fundamental research.…”

Section: Introductionmentioning

confidence: 99%

Growth twins in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Zheng

Pan

Schweizer

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

A study of electrical and optical properties of sputtered SnO2WO3 thin films AIP Conf.Growth twins in nanocrystalline SnO 2 thin films with grain size 5-50 nm have been investigated by high-resolution transmission electron microscopy. They show the ͕101͖͗101͘ geometry, metal atom mirror symmetry, and slight distortion of oxygen atoms. Multiple twins and step twin boundaries with a density about 10 15 m Ϫ2 were frequently observed in the films. It appears there are tin interstitials at step twin boundaries and, hence, electronic donors associated with the interstitials.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth twins in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Zheng

Pan

Schweizer

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…By varying the dopant concentration, it is possible to control the electrical resistance of the layer. As is known [57,58], the Sb dopant also favors a decrease in the drift of the resistance of the resistive layer. In this case, a decrease in the drift of the resistance R g is associated with the two factors: first, the stabilizing effect of Sb atoms that possess getter properties with respect to a number of foreign (destabilizing) impurities (such as chlorine ions, alkali ions, etc.)…”

Section: Doping Of Polycrystalline Materials Through Diffusion From Nmentioning

confidence: 95%

Silicate nanosized films prepared by the sol-gel method for use in planar technology for fabricating semiconductor gas sensors

Шилова

2005

Glass Phys Chem

View full text Add to dashboard Cite

This paper reports on the results of investigations into the specific features of the formation of silicate nanosized films from sols based on tetraethoxysilane (hydrolyzed in an acid medium in the presence of inorganic dopants) on the surface of semiconductor materials. The properties of the films thus prepared are analyzed as functions of the synthesis conditions of sols and the conditions of deposition and heat treatment of the films. It is demonstrated that these films can be used in technology for fabricating semiconductor gas sensors based on SnO 2 .

show abstract

“…Usually one can add noble or transition metals the film as catalysts [6][7][8] or prepare composite thin films 9 to raise the selectivity and sensitivity. For the sensitive layers, n-type metal oxide semiconductors such as SnO 2 ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Study of thin-film <inline-formula><math display="inline" overflow="scroll"><msub><mi>SO</mi><mrow><mn>2</mn></mrow></msub></math></inline-formula> gas sensors by photometric and ellipsometric methods

2001

View full text Add to dashboard Cite

Pt-, Pd-, and Zr-doped SnO 2 thin films and dopant-free VO x films were fabricated by planar magnetron sputtering. Tests for sensitivity to SO 2 for all samples were conducted at 180°C, and the sensitivities were investigated ex situ with photometric and ellipsometric methods at room temperature. It was found that the optical sensitivities as well as the sensitive wavelength region for SnO 2 films could be tuned by doping. The Pd-doped SnO 2 films had good sensitivity in the visible range, and the Zr-doped in the near IR. The dominant sensitive wavelength region for VO x films fell into the visible range, and the ratio of the sensitivity in the visible to that in the near IR increased with O 2 /Ar in the depositing atmosphere.

show abstract

Ni, In and Sb implanted Pt and V catalysed thin-film SnO2 gas sensors

Cited by 28 publications

References 15 publications

Growth twins in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Growth twins in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Silicate nanosized films prepared by the sol-gel method for use in planar technology for fabricating semiconductor gas sensors

Study of thin-film <inline-formula><math display="inline" overflow="scroll"><msub><mi>SO</mi><mrow><mn>2</mn></mrow></msub></math></inline-formula> gas sensors by photometric and ellipsometric methods

Contact Info

Product

Resources

About