Ni₂Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Abstract

Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring.

SiC and Ion collectors as diagnostics of laser-generated plasma at intensity of 1010W/cm2

“…This device represents a photodiode having a total area of about 8 mm 2 , of which 7 mm 2 directly exposed to the radiation and 1 mm 2 covered by the Ni 2 Si metal interdigitated contact. SiC detector was polarized inversely at -20 V at which its leakage current was of about 10-20 pA. Further details on the used photodiode are reported in a previous paper [18]. The detection efficiency SiC is limited at low energy by the minimum energy to generate an electron-hole pair, which is of about 7.3 eV [19] and at high energy by its active layer depth of 4 microns using -20 V reverse polarization.…”