Ni1.282(4)Si1.284(5)P3 or NiSi2P3: Two Solutions with Different Atom Distributions for One Single-Crystal X-Ray Data Set, Both Refined to Residuals of Less Than 2.5%

Wallinda, Jörg; Jeitschko, Wolfgang

doi:10.1006/jssc.1995.1071

Cited by 18 publications

(22 citation statements)

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“…The earlier reported C centered orthorhombic lattice of NiSi 2 P 3 (4) and Cu 4 SiP 8 (5). In NiSi 2 P 3 the nickel and silicon atoms have only phosphorus neighbors, and there these compounds (2) was confirmed.…”

Section: Introductionmentioning

confidence: 97%

The Rare Earth Silicon PhosphidesLnSi2P6(Ln= La, Ce, Pr, and Nd)

Kaiser

Jeitschko

1996

Journal of Solid State Chemistry

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Section: Introductionmentioning

confidence: 97%

The Rare Earth Silicon PhosphidesLnSi2P6(Ln= La, Ce, Pr, and Nd)

Kaiser

Jeitschko

1996

Journal of Solid State Chemistry

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“…[1][2][3][4] Some representative ternary silicon phosphides were reported, such as CoSi 3 P 3 (P2 1 ), [5] NiSi 2 P 3 (Imm2), [6] LnSi 2 P 6 (Cmc2 1 , Ln = La, Ce, Pr), [7] KSi 2 P 3 (C2/c) [8] and Ag 2 SiP 2 (I42d). [9] The crystal structure difference exhibits the diversity of ternary silicon phosphides and the interesting structures of Si-P frameworks.…”

Section: Introductionmentioning

confidence: 98%

Synthesis and Crystal Structures of the Calcium Silicon Phosphides Ca₂Si₂P₄, Ca₃Si₈P₁₄ and Ca₃Si₂P₄

Zhang

et al. 2015

Zeitschrift anorg allge chemie

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Abstract. Three calcium silicon phosphides: Ca 2 Si 2 P 4 , Ca 3 Si 8 P 14 , and Ca 3 Si 2 P 4 were synthesized by solid state reaction and identified by single-crystal X-ray diffraction. Ca 2 Si 2 P 4 crystallizes in the noncentrosymmetric space group P4 1 2 1 2 (no.92) with a = 7.173 Å, c = 26.295 Å. Both Ca 3 Si 8 P 14 and Ca 3 Si 2 P 4 crystallize in the space group P2 1 /c (no.14) with a = 12.138 Å, b = 13.476 Å, c = 6.2176 Å, β = 90.934°,

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“…The CuGe 2 P 3 [1] and NiSi 2 P 3 [8] structures are close to that of Cu 47 Si 91 P 144 . In all structures the atoms are tetrahedrally coordinated, the Cu, Ni, Ge and Si atoms have only P neighbors and vice versa.…”

Section: Structure Descriptionmentioning

confidence: 65%

“…A composition Ni 1.68 Si 0.88 P 3 [6] was reported for one of the seven ternary phases in the Ni/Si/ P system [7]. Further studies of the same structure were done by the authors [8] who, using the same single crystal data set, were able to refine the structure with the two compositions Ni 1.282(4) Si 1.284(5) P 3 and NiSi 2 P 3 to the very low R-factors 0.023 and 0.021, respectively. Using EDAX results and oxidation numbers (ON) they chose the composition NiSi 2 P 3 to be the correct one.…”

Section: Introductionmentioning

confidence: 77%

Modulated Crystal Structure and Electronic Properties of Semiconductor Cu47Si91P144

Mozharivskyj

Lang

Franzen

2000

Z. anorg. allg. Chem.

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Abstracts. Crystals of the copper silicon phosphide were synthesized by the iodine gas transport technique. The x-ray single crystal methods revealed a big superstructure with the lattice parameters a = b = 44.510 and c = 20.772 A Ê and a basic tetragonal substructure with a = 3.7092 and c = 5.1930 A Ê . Analysis of the intensities showed that the superstructure has a 1 / 2 , 1 / 2 , 1 / 2 tetragonal substructure with a = 22.255 and c = 10.386 A Ê . This 1 / 2 , 1 / 2 , 1 / 2 substructure (Cu 47 Si 91 P 144 ) and the basic tetragonal structure (Cu 0.71 Si 1.29 P 2 ) were solved by the direct methods and refined in the I4m2 space group. The phosphide is a semiconductor with a small energy gap of 0.0269(1) eV. The electrical properties are considered in terms of Anderson localization. The density of states was calculated using the extended Hu È ckel tight binding method. Die modulierte Kristallstruktur und die elektronischen Eigenschaften des Halbleiters Cu 47 Si 91 P 144Inhaltsu È bersicht. Kristalle eines Kupfersiliciumphosphids konnten u È ber einen chemischen Transport mit Jod erhalten werden. Ro È ntgenographische Untersuchungen an Einkristallen ergaben eine ausgedehnte Ûberstruktur mit den Gitterkonstanten a = b = 44.510 und c = 20.772 A Ê der zugrunde liegenden tetragonalen Substruktur mit a = 3.7092 und c = 5.1930 A Ê . Eine Analyse der Intensita È ten der Ûberstruk-tur ergab eine weitere Substruktur mit a = 22.255 und c = 10.386 A Ê . Die Atomanordnungen in dieser 1 / 2 , 1 / 2 , 1 / 2 Substruktur (Cu 47 Si 91 P 144 ) und in der zugrunde liegenden Basisstruktur (Cu 0.71 Si 1.29 P 2 ) konnten u È ber direkte Methoden bestimmt und anschlieûend verfeinert werden (Raumgruppe: I4m2). Die Verbindung ist ein Halbleiter mit einer schmalen Energielu È cke von 0.0269(1) eV. Die elektrischen Eigenschaften wurden im Rahmen der Anderson Lokalisierung betrachtet. Die Zustandsdichten wurden nach dem Extended-Hu È ckel-Tight-Binding Modell berechnet.

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Ni1.282(4)Si1.284(5)P3 or NiSi2P3: Two Solutions with Different Atom Distributions for One Single-Crystal X-Ray Data Set, Both Refined to Residuals of Less Than 2.5%

Cited by 18 publications

References 0 publications

The Rare Earth Silicon PhosphidesLnSi2P6(Ln= La, Ce, Pr, and Nd)

The Rare Earth Silicon PhosphidesLnSi2P6(Ln= La, Ce, Pr, and Nd)

Synthesis and Crystal Structures of the Calcium Silicon Phosphides Ca₂Si₂P₄, Ca₃Si₈P₁₄ and Ca₃Si₂P₄

Modulated Crystal Structure and Electronic Properties of Semiconductor Cu47Si91P144

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Ni1.282(4)Si1.284(5)P3 or NiSi2P3: Two Solutions with Different Atom Distributions for One Single-Crystal X-Ray Data Set, Both Refined to Residuals of Less Than 2.5%

Cited by 18 publications

References 0 publications

The Rare Earth Silicon PhosphidesLnSi2P6(Ln= La, Ce, Pr, and Nd)

The Rare Earth Silicon PhosphidesLnSi2P6(Ln= La, Ce, Pr, and Nd)

Synthesis and Crystal Structures of the Calcium Silicon Phosphides Ca2Si2P4, Ca3Si8P14 and Ca3Si2P4

Modulated Crystal Structure and Electronic Properties of Semiconductor Cu47Si91P144

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Synthesis and Crystal Structures of the Calcium Silicon Phosphides Ca₂Si₂P₄, Ca₃Si₈P₁₄ and Ca₃Si₂P₄