Nickel foam supported hierarchical Co₉S₈ nanostructures for asymmetric supercapacitors

Abstract

Hierarchical NiCo2S4 nanostructures directly supported on nickel foam show excellent electrochemical performances for supercapacitors.

Highly Interconnected Nanorods and Nanosheets Based on a Hierarchically Layered Metal–Organic Framework for a Flexible, High-Performance Energy Storage Device

“…The highest value of 1.35 F cm –2 corresponds to one of the best performances among the reported areal capacitances of ASCs based on cobalt sulfide or the MOF. The high energy density of the ASC in the PVA/KOH electrolyte is estimated at 270 mW h cm –2 with a high power density of 0.6 W cm –2 , which is supported by the previously reported values from the Ragone plot in Figure d. − These high energy and power densities of the u-hl-MSC/NRS-based ASC are highly attributed to its highly interconnected structure. This structure enhances the conductivity and intercalation of hydroxyl ions, large mass loading amount on Ni foam, and the core–shell structure of u-hl-MOF@Co 1– x S@C. This effectively prevents the swelling during the charge–discharge process and the conductive graphitic carbon shell to promote the charge storage.…”

Facile synthesis of CoNi 2 S 4 /Co 9 S 8 composites as advanced electrode materials for supercapacitors

“…For example, Karade et al. [30] as another hopeful electrode materials because of its high specific capacitance draw much attention, but its cycle performance hinder its development [32][33]. Thus, the fabrication of CoNi2S4/Co9S8 (denoted as CNSCS) composites may be a desirable method to acquire comprehensively high-performance supercapacitors electrode materials.…”

Formation of Hollow Co‐Ni‐S Nanowedges Arrays via Sulfidation‐etch of ZIF‐L for Advanced Hybrid Supercapacitor

“…Even at a high power density of 33.52 mW cm −2 (2350.00 W kg −1 ), it still has a high energy density of 0.16 mWh cm −2 (11.12 Wh kg −1 ) (Figure g). The performance can comparable or even superior compared with previously reported metal sulfide based devices, such as Co 9 S 8 /NS−C//AC (14.85 W h kg −1 at 681.82 W kg −1 ), Co 9 S 8 //AC (13.3 W h kg −1 at 1.11 kW kg −1 ), CoS x //graphene (14.68 W h kg −1 at 369 W kg −1 ), Ni 3 S 2 //CoNi 2 S 4 device (6.6 Wh kg −1 at 818 W kg −1 ), ASC based on Ni 3 S 2 nanorod array and pen ink (8.2 Wh kg −1 at 214.6 W kg −1 ) …”