Nickel Silicide Formation Using Excimer Laser Annealing

Tous, Loïc; Lerat, Jean-François; Emeraud, T.; Negru, R.; Huet, Karim; Urueña, A.; Aleman, Monica; Russell, Richard; John, Joachim; Poortmans, Jef; Mertens, R.

doi:10.1016/j.egypro.2012.07.101

Cited by 9 publications

(4 citation statements)

References 9 publications

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“…For solar cells tabbed on the front busbars with conventional soldering process in module-level interconnection, good adhesion for screen-printed contacts is in the range of 2-2.5 N/mm for a 45 ∘ pull strength test [97]. Adhesion strength in the range of 1-2.7 N/mm has been obtained for Ni-Cu based front contacts [68,97,98] with the best results obtained for thinner ribbons. Low peel strengths were obtained for standard soldering process with a failure in the metallization stack [99].…”

Section: Characterization Of Adhesion and Long Term Stability Of Ni-cmentioning

confidence: 93%

“…For electroless plated Ni and electroplated Cu, heat-quench test and peel test can be employed for qualitative indication of the adhesion [93]. Methods like exposure to salt spray test and atmospheric conditions can also indicate various defects like metal corrosion, blisters, pits, and cracks that are present in the metallic coating subsequent to exposure [94][95][96][97]. Pull test method has been used for quantifying adhesion of plated Ni films on Si substrates [69,75] and adhesion strengths in the range of 5-10 MPa indicate strong adhesion of deposited Ni over Si.…”

Section: Characterization Of Adhesion and Long Term Stability Of Ni-cmentioning

confidence: 99%

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Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Raval

Solanki

2013

Journal of Solar Energy

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Given the high percentage of metal cost in cell processing and concerns due to increasing Ag prices, alternative metallization schemes are being considered. Ni-Cu based front side metallization offers potential advantages of finer grid lines, lower series resistance, and reduced costs. A brief overview of various front side patterning techniques is presented. Subsequently, working principle of various plating techniques is discussed. For electroless plated Ni seed layer, fill factor values nearing 80% and efficiencies close to 17.5% have been demonstrated, while for Light Induced Plating deposited layers, an efficiency of 19.2% has been reported. Various methods for qualifying adhesion and long term stability of metal stack are discussed. Adhesion strengths in the range of 1–2.7 N/mm have been obtained for Ni-Cu contacts tabbed with conventional soldering process. Given the significance of metallization properties, different methods for characterization are outlined. The problem of background plating for Ni-Cu based metallization along with the various methods for characterization is summarized. An economic evaluation of front side metallization indicates process cost saving of more than 50% with Ni-Cu-Sn based layers. Recent successful commercialization and demonstration of Ni-Cu based metallization on industrial scale indicate a potential major role of Ni-Cu based contacts in near future.

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Section: Characterization Of Adhesion and Long Term Stability Of Ni-cmentioning

confidence: 93%

Section: Characterization Of Adhesion and Long Term Stability Of Ni-cmentioning

confidence: 99%

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Raval

Solanki

2013

Journal of Solar Energy

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“…In the attempt to separate these effects, the authors had conducted pulsed laser SEE tests without biasing of the device and still observed laser induced damages at relatively similar laser energies. In the absence of electric field, several other research groups [12][13][14] had already demonstrated that pulsed laser was capable of inducing annealing effects on nickel silicide layers. However, these were demonstrated via pulsed laser of much shorter wavelengths (or higher photon energy) which were less than 355 nm and longer pulse duration (10 to 150 ns) than the pulsed laser utilized in this paper.…”

Section: Discussionmentioning

confidence: 99%

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing

Chua

Liu

Chef

et al. 2018

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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“…Fouet et al studied the silicide formation using different Ni film thicknesses to control NiSi formation [9]. Tous et al obtained the direct formation of the NiSi phase using the excimer laser annealing (ELA) process [10]. Different methods have been reported for growing NiSi films for various applications.…”

Section: Introductionmentioning

confidence: 99%

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Eadi

Song

et al. 2019

Coatings

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In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10 −5 Ω-cm 2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

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Nickel Silicide Formation Using Excimer Laser Annealing

Cited by 9 publications

References 9 publications

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

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