Nickel silicides in semiconductor processing: thermal budget considerations

A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells

“…Ni is widely used for forming silicide due to its ease of availability and lower cost. Moreover, nickel silicide (NiSi) can be formed at temperatures starting from 250 1C to higher temperatures of 500 1C as reported [13][14][15][16]. Contact resistivity as low as 0.01 mO cm 2 is reported for metal-semiconductor contacts formed using NiSi [17].…”