Nickel–Tin Transient Liquid Phase Bonding Toward High-Temperature Operational Power Electronics in Electrified Vehicles

Yoon, Sang Won; Glover, Michael D.; Shiozaki, Koji

doi:10.1109/tpel.2012.2212211

Cited by 131 publications

(41 citation statements)

References 23 publications

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“…(5) and (6). This is because on one hand both the porosity and shear strength data series follow a normal distribution with high confidence level (Figs.…”

Section: Kinetic Equationsmentioning

confidence: 75%

“…Transient liquid phase soldering is another potential technology for high temperature and highly reliable power die attachments, but needs thick base metal layers on both the power dies and the supporting substrates. By contrast, silver or nanosilver sintering appears to be a more convenient and promising lead-free alternative [5,6]. It can be applied on the common Au and Ag finishes of commercially available power dies and substrates.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film

Dai¹,

Li²,

Agyakwa³

et al. 2017

Journal of Microelectronics and Electronic Packaging

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(2017) Time-efficient sintering processes to attach power devices using nanosilver dry film. Journal of Microelectronics and Electronic Packaging, 14 (4 A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk Abstract: Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an automatic die pick and place machine, resulting in process times of just a few seconds. The combined parameters of sintering temperature 250 C, sintering pressure 10 MPa and sintering time 5 s were selected as the benchmark process to attach 2 mm × 2 mm × 0.5 mm dummy Si devices. Then the effects of either the sintering temperature (240 to 300 C), time (1 to 9 s) or pressure (6 to 25 MPa) on the porosity and shear strength of the sintered joints were investigated with 3 groups and a total of 13 experimental trials. The average porosities of 24.6 to 46.2% and shear strengths of 26.1 to 46.6 MPa are comparable with and/or even better than those reported for sintered joints using wet nanosilver pastes. Their dependences on the sintering temperature, time and pressure are further fitted to equations similar to those describing the kinetics of sintering processes of powder compacts. The equations obtained can be used to not only reveal different mechanisms dominating the densification and bonding strength, but also anticipate the thermal-induced evolutions of microstructures of these rapidly sintered joints during future reliability tests and/or in service.

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“…(5) and (6). This is because on one hand both the porosity and shear strength data series follow a normal distribution with high confidence level (Figs.…”

Section: Kinetic Equationsmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film

Dai¹,

Li²,

Agyakwa³

et al. 2017

Journal of Microelectronics and Electronic Packaging

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“…The high-temperature compatibility is the most frequent reason for investigating the Ni-Sn system [25][26][27]. In addition, Nickel and tin are relatively low-cost materials which make them attractive for more cost-sensitive applications [26,28]. The formed IMCs may also have matching thermomechanical material properties which may be critical in applications with very high operation temperatures [29].…”

Section: Rationale For Ni-snmentioning

confidence: 99%

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Aasmundtveit¹,

Luu²,

Nguyen³

et al. 2018

Intermetallic Compounds - Formation and Applications

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Solid-liquid interdiffusion (SLID) bonding for microelectronics and microsystems is a bonding technique relying on intermetallics. The high-melting temperature of intermetallics allows for system operation at far higher temperatures than what solder-bonded systems can do, while still using similar process temperatures as in common solder processes. Additional benefits of SLID bonding are possibilities of fine-pitch bonding, as well as thin-layer metallurgical bonding. Our group has worked on a number of SLID metal systems. We have optimized wafer-level Cu-Sn SLID bonding to become an industrially feasible process, and we have verified the reliability of Au-Sn SLID bonding in a thermally mismatched system, as well as determined the actual phases present in an Au-Sn SLID bond. We have demonstrated SLID bonding for very high temperatures (Ni-Sn, having intermetallics with melting points up to 1280°C), as well as SLID with low process temperatures (Au-In, processed at 180°C, and Au-In-Bi, processed at 90-115°C). We have verified experimentally the high-temperature stability for our systems, with quantified strength at temperatures up to 300°C for three of the systems: Cu-Sn, Au-Sn and Au-In.Keywords: microelectronics/microsystem assembly, bonding technology, harsh environments, wafer processing, reliability, transient liquid phase © 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Motivation for SLID The challenge of die attach and interconnectionFor all electronic systems, the attachment of components to substrates and their electrical connection is a crucial part of the system. Traditionally, the processes for attachment and interconnection have been considered more a craft than a science. The historical focus of electronics and microtechnology has been on the design, manufacturing and testing of components, circuits and devices, rather than on the system integration and the processes needed for actually building the system. The 'electronic revolution' has given ever-increasing performance of devices at ever-decreasing prices for more than half a century. Initial milestones were the invention of the transistor (1947) and the integrated circuit (IC) (1958). The driving factor has been a continuous decrease in size (of components and on features of components) and cost, made possible through batch processing of silicon wafers. Single-crystal silicon is a very well-defined material with extremely well-characterized properties, allowing process technology that yields extremely small features (10 nm by 2017, with a further decrease expected). Miniaturization of components and the use of large Si wafers give a huge number of components manufactured in every batch, lowering the cost. Furthermore, miniaturization allows an increase in operating frequency (or a decrease...

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“…In the case of micro-bumps or transient liquid phase soldering, the joint often consists entirely of intermetallic phase(s). Depending on the approach, this is often Ni3Sn4 [19] , a Cu6Sn5-Cu3Sn mixture [20] or Ag3Sn [21].…”

Section: Introductionmentioning

confidence: 99%

“…Thermal cycling is a potentially larger reliability concern in fully-intermetallic joints because they often experience larger temperature changes as they can operate at higher temperature than joints containing Sn phase [19]. Thus, the CTE of intermetallics in solder joints is a key thermophysical property that needs to be measured.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic thermal expansion of Ni 3 Sn 4 , Ag 3 Sn, Cu 3 Sn, Cu 6 Sn 5 and βSn

et al. 2017

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The directional coefficient of thermal expansion (CTE) of intermetallics in electronic interconnections is a key thermophysical property that is required for microstructurelevel modelling of solder joint reliability. Here, CTE ellipsoids are measured for key solder intermetallics using synchrotron x-ray diffraction (XRD). The role of the crystal structure used for refinement on the CTE shape and temperature dependence is investigated. The results are used to discuss the Sn-IMC orientation relationships (ORs) that minimise the in-plane CTE mismatch on IMC growth facets, which are measured with electron backscatter diffraction (EBSD) in solder joints on Cu and Ni substrates. The CTE mismatch in fully-intermetallic joints is discussed, and the relationship between the directional CTE of monoclinic and hexagonal polymorphs of Cu6Sn5 is explored.

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Nickel–Tin Transient Liquid Phase Bonding Toward High-Temperature Operational Power Electronics in Electrified Vehicles

Cited by 131 publications

References 23 publications

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Anisotropic thermal expansion of Ni 3 Sn 4 , Ag 3 Sn, Cu 3 Sn, Cu 6 Sn 5 and βSn

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