Nickel Vibrating Micromechanical Disk Resonator with Solid Dielectric Capacitive-Transducer Gap

Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3Films by LPCVD

“…The fabricated devices show quality factors well over 200,000 at atmospheric pressure, 25 the highest reported till date for post processing compatible capacitively transduced resonators. 26,27 The high quality factor achieved here, compared to commonly applied alternative thin-film materials, is possibly due to the reduced thermoelastic damping 28 and reduced surface losses 29 caused by the lattice defects and other imperfections that acts as a source of energy dissipation in micromechanical resonators.…”

Resonant body transistors in standard CMOS technology

“…However BEOL materials such as metals and low-quality dielectrics as well as the constrained thermal budget limit device performance and maximum resonance frequency. Another type of MEMS-last devices includes those that are fabricated on top of a complete CMOS die in a separate custom MEMS process [12,13]. This approach can reduce system footprint and introduce non-CMOS materials, but are subject to increased process complexity and cost from additional masks.…”

Analysis and suppression of spurious modes of the ring shape anchored RF MEMS contour mode disk resonator

“…Despite of their advantages, disk resonators encountered with a sort of important challenges, such as limited frequency range (Wang et al 2003(Wang et al , 2004Li et al 2004;Clark et al 2005), need for encapsulation for attaining high Q and for contamination protection Huang et al 2006Huang et al , 2007, high motional resistance (which is too high to allow direct coupling or coupling using on-chip L networks to antennas in RF systems where need to be matched to the impedance in the range of 50 and 330 X) (Xie et al 2003;Abdelmoneum et al 2003;White et al 2006;Torres et al 2007), and the reliability of the resonating structure in ultra high frequencies due to their thin anchor (Baghelani and Ghavifekr 2010a, b).…”