NiCr resistors for terahertz applications in an InP DHBT process

Stoppel, D.; Ostermay, Ina; Hrobak, Michael; Shivan, T.; Hossain, Maruf; Reiner, Maria; Thiele, Nico; Nosaeva, Ksenia; Brahem, M.; Krozer, Viktor; Boppel, Sebastian; Halder, Nripendra N.; Weimann, Nils

doi:10.1016/j.mee.2019.01.007

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…Ni-Cr resistors offer specific points of interest for applications with extraordinary demand for high stability as well as low TCR-like chosen circuits for measuring hardware, information handling, media transmission, etc [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. In GaAs monolithic microwave integrated circuits (MMICs), thin film metal resistors are promptly superseding semiconductor resistors where the resistive medium is a mesa etched or an ion implanted GaAs active layer.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and characterization of thin film Ni–Cr resistors on MMICs

Alim

Rezazadeh

Kyabaggu

et al. 2020

Semicond. Sci. Technol.

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This paper investigates the design, fabrication, testing of Ni-Cr based thin film resistors (TFRs) with 80:20 ratio is fabricated on a 2 inch GaAs wafer for monolithic microwave integrated circuits (MMICs) applications. For the purpose of assessing the Ni-Cr TFRs performance in 3D MMICs, five resistors having size of 0.5, 1, 2, 4 and 8 squares and thickness of 30 nm each from five distinctive groups were measured. All the TFRs are measured with and without polyimide on top of these resistors. The TFRs with polyimide exhibits a minor increase in resistance value which is possibly due to the oxidation process during the curing of two layers of polyimides. On the other hand, great temperature solidness has been watched over the temperature examined and a greatest TCR of 60 ppm C −1 is achieved from room temperature to 150 °C.

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Section: Introductionmentioning

confidence: 99%

“…Therefore, there is a limit on the maximum electric field (volts-per-unit-length) allowed in the resistor. This place a limitation on the GaAs resistors when they are used in designing a biasing network, particularly on the drain or collector biasing network where high voltage drop appears [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of thin film Ni–Cr resistors on MMICs

Alim

Rezazadeh

Kyabaggu

et al. 2020

Semicond. Sci. Technol.

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“…The thickness of nickel-chrome (NiCr) thin-film resistors (TFRs) is 44 nm, with a sheet resistance on 25 Ω/sq [8].…”

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confidence: 99%

Design of an Embedded Broadband Thermoelectric Power Sensor in the InP DHBT Process

Heinrich

Krozer

2020

7th International Electronic Conference on Sensors and Applications

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The thermopile-based thermoelectric sensor has emerged as an important approach for microwave power measurement. It employs the Seebeck effect, which converts the microwave power into the heat and generates the thermovoltage. However, the output thermovoltage generally exhibits a frequency-dependent feature, which affects measurement accuracy. Besides, the low sensitivity of the current existed planar thermopile-based sensor constrains its further application. This is mainly caused by the heat loss of the substrate in the conversion process of microwave power-heat-electricity. In this paper, a novel embedded power sensor based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) process is presented. The thermopile is embedded in the benzocyclobutene (BCB) to prevent the heat loss, and the embedded structure also enables this sensor to eliminate the need for microelectromechanical system (MEMS) technology. The electromagnetic simulation by ANSYS high frequency structure simulator (HFSS) and thermal simulation by ANSYS Steady-State Thermal are combined to evaluate the sensor performance. The result shows that the output voltage increases with the input power linearly, and the proposed sensor is almost independent of the microwave frequency. A sensitivity of l.07 mV/mW has been achieved up to 200 GHz, with the port return loss lower than −15.8 dB.

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