Niobium substitution in Zr0.5Hf0.5NiSn based Heusler compounds for high power factors

Schwall, Michael; Balke, Benjamin

doi:10.1063/1.3548867

Cited by 42 publications

(33 citation statements)

References 16 publications

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“…[ 91,92 ] The isoelectronic alloying on Zr or Ni sublattice has been demonstrated effective in suppressing κ L in ZrNiSn system. [ 20,23,25,26,74,93,94 ] Interestingly, the mobility slight increases with the introduced Zr site disorder by Hf substitution, as shown in Figure 8 a, possibly resulting from the decreased m * with increasing Hf content ( m * ≈ 2.4 m e for HfNiSn) and the low alloy scattering potential for (Zr,Hf)NiSn. Consequently, the power factor was not jeopardized by alloying (Figure 8 b).…”

Section: Band Structure and Related Parametersmentioning

confidence: 86%

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High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

Zhu

Xie

et al. 2015

Advanced Energy Materials

443

261

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respectively the temperature of the hot side and cold side, Δ T = T H -T C and T avg are the temperature gradient and average between hot and cold sides. [ 4 ] The fi gure of merit zT is defi ned as zT = α 2 σT /( κ e + κ L ), where α , σ , T , κ e and κ L are respectively the Seebeck coeffi cient, the electrical conductivity, the absolute temperature, and the electrical and lattice components of total thermal conductivity κ . [ 2 ] High conversion effi ciency of 15%-20% is thought of as the "Holy Grail" for large scale application of TE technologies. [ 5 ] As depicted in Figure 1 , this conversion efficiency can be realized by using middle temperature (500-900 K) TE materials with very high zT or high temperature (>900 K) TE materials with compromised zT . Recently, much progress has been made in developing high effi ciency middle temperature TE materials: high zT 's of ≈1.5 at 750 K for n-type and ≈2.0 at for p-type have been achieved in PbTe-based alloys, [6][7][8][9] while n-type and p-type fi lled skutterudites have the maximum zT 's of ≈1.7 and ≈1.0, respectively, near 800 K. [ 10,11 ] Some other TE materials made of earth-abundant and non-toxic elements have also been identifi ed, such as single crystal SnSe ( zT ≈ 2.6 at 923 K), [ 12 ] silicides [ 13,14 ] and α -MgAgSb. [ 15 ] However, there remain tremendous challenges for most of these TE materials for large scale commercial application, mainly due to their relatively poor thermal stability and weak mechanical strength at high temperatures. In Half-Heusler (HH) compounds have gained ever-increasing popularity as promising high temperature thermoelectric materials. High fi gure of merit zT of ≈1.0 above 1000 K has recently been realized for both n-type and p-type HH compounds, demonstrating the realistic prospect of these high temperature compounds for high effi ciency power generation. Here, recent progress in advanced fabrication techniques and the intrinsic atomic disorders in HH compounds, which are linked to the understanding of the electrical transport, is discussed. Thermoelectric transport features of n-type ZrNiSn-based HH alloys are particularly emphasized, which is benefi cial to further improving thermoelectric performance and comprehensively understanding the underlying mechanisms in HH thermoelectric materials. The rational design and realization of new high performance p-type Fe(V,Nb)Sb-based HH compounds are also demonstrated. The outlook for future research directions of HH thermoelectric materials is also discussed.

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Section: Band Structure and Related Parametersmentioning

confidence: 86%

“…[ 21,23,27,30 ] 25 NiSn with phase separation due to the abnormally low lattice thermal conductivity. [ 30 ] The highest zT of 1.5 in n-type HH system was reported for Sb-doped (Ti,Zr,Hf)NiSn compounds at 700 K by Sakurada and Shutoh.…”

Section: Phonon Scattering Mechanisms and Thermal Conductivity Reductionmentioning

confidence: 99%

High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

Zhu

Xie

et al. 2015

Advanced Energy Materials

443

261

View full text Add to dashboard Cite

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“…This is typical for all semiconducting transition metal based Heusler compounds in 1 b C structure. Further substitutions with other main-group elements and transition metals have been made for the optimization of the thermoelectric performance [49,50] (see Fig. 8).…”

Section: Heusler Compounds For Thermoelectricsmentioning

confidence: 99%

Topological insulators and thermoelectric materials

Müchler

Casper

Yan

et al. 2012

Physica Rapid Research Ltrs

188

130

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Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes were both good thermoelectric properties and topological insulators can be found.Comment: Phys. Status Solidi RRL, accepte

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“…Bismuth telluride (Bi 2 Te 3 ) and its alloys are the most widely used commercial TE materials over the temperature range from 300 K to 400 K since they show high conversion efficiency [1,2]. Although Bi 2 Te 3 compounds are known as the good TE material, research and development of alternative materials are necessary since the supplies of these materials are predicted to be insufficient and due to their toxicity [3,4]. In contrast, silicon is one of the most abundant materials on the face of the earth.…”

Section: Introductionmentioning

confidence: 99%