NiSi formation through a semipermeable membrane of amorphous Cr(Ni)

Rozgonyi, G. A.; Lee, Ju‐Hyeon; Knoesen, D.; Adams, Dale W.; Patnaik, B.; Parikh, N.R.; Salih, Ali; Balducci, P.

doi:10.1063/1.104529

Cited by 18 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8'9 De Reus et al 8 formed NiSi epitaxial layer by Ni-Si reaction in Ni/a-NiZr/Si system. Rozgonyi et al 9 formed an ultrathin NiSi layer by NiCr/Si interaction through a segregated semipermeable amorphous Crrich membrane. In these experiments an amorphous phase and a silicide with three elements: Ni, Zr, and Si in the former and Ni, Cr, and Si in the latter are involved.…”

mentioning

confidence: 99%

Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System

Hong

Rozgonyi

1994

J. Electrochem. Soc.

View full text Add to dashboard Cite

Interdiffusion, phase transformation, and epitaxial CoSt2 formation in a Co/Ti multilayer-Si(100) system have been investigated. Evaporated and sputtered Co/Ti multilayers were deposited on RCA-cleaned and dilute HF-dipped St(100) substrate. The multilayer system was then subsequently heat-treated by a two-step annealing process. An initial Ti(O) amorphous layer formed due to oxygen/carbon incorporation during the deposition, or a TiSi~ amorphous layer formed by solid-state amorphization reaction. These interracial layers evolved into a Co-Ti(O)-Si amorphous alloy which functioned as a diffusion membrane which controlled the phase formed during subsequent annealing. The Co-silicide phase sequence was CoSt2 --> Co2Si --> CoSt, and finally CoSt2 from 550~ to higher temperature. Preferentially oriented (311) CoSt formed as the dominant phase in the temperature range from 650 to 800~ Epitaxial CoSt2 nucleated from the CoSt template layer and grew substantially during the high temperature second annealing. The resulting epitaxial CoSt2 layer exhibited superior thermal stability and a resistivity as low as 15 #~-cm, even for nanoscale thicknesses. Interface impurity cleansing by Ti, uniform and slow Co supply through the interfacial amorphous membrane, and a positive effect of the capping layers throughout the process promoted preferential (311) CoSt formation and subsequent epitaxial CoSt2 growth.

show abstract

mentioning

confidence: 99%

Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System

Hong

Rozgonyi

1994

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Over the past several decades, numerous experimental studies have advanced the knowledge about interface-mediated phase formation processes during annealing of metal/semiconductor systems, identifying several aspects which are crucial for phase formation: the thermally activated diffusion through the interface, the competition between diffusion and nucleation processes, and the atomic reservoir. − The atomic reservoir determines the equilibrium composition assumed at sufficiently high temperatures and reaction times, as schematically shown in Figure for the Pd–Ge system. The phase and microstructure evolution during annealing are affected by the as-deposited interface, which can be manipulated, e.g., by deposition of diffusion barriers, ,, or controlled defect formation via ion bombardment. , Modification of the interface during growth, choosing appropriate deposition parameters, is the least invasive approach, but needs a detailed understanding of the interplay between as-deposited metal/semiconductor interface and structure formation during subsequent solid-state reaction.…”

Section: Introductionmentioning

confidence: 99%

“… 19 − 22 The atomic reservoir determines the equilibrium composition assumed at sufficiently high temperatures and reaction times, as schematically shown in Figure 1 for the Pd–Ge system. The phase and microstructure evolution during annealing are affected by the as-deposited interface, which can be manipulated, e.g., by deposition of diffusion barriers, 1 , 23 , 24 or controlled defect formation via ion bombardment. 25 , 26 Modification of the interface during growth, choosing appropriate deposition parameters, is the least invasive approach, but needs a detailed understanding of the interplay between as-deposited metal/semiconductor interface and structure formation during subsequent solid-state reaction.…”

Section: Introductionmentioning

confidence: 99%

In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers

Krause

Abadias

Babonneau

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Ohmic or Schottky contacts in micro- and nanoelectronic devices are formed by metal–semiconductor bilayer systems, based on elemental metals or thermally more stable metallic compounds (germanides, silicides). The control of their electronic properties remains challenging as their structure formation is not yet fully understood. We have studied the phase and microstructure evolution during sputter deposition and postgrowth annealing of Pd/a-Ge bilayer systems with different Pd/Ge ratios (Pd:Ge, 2Pd:Ge, and 4Pd:Ge). The room-temperature deposition of up to 30 nm Pd was monitored by simultaneous, in situ synchrotron X-ray diffraction, X-ray reflectivity, and optical stress measurements. With this portfolio of complementary real-time methods, we could identify the microstructural origins of the resistivity evolution during contact formation: Real-time X-ray diffraction measurements indicate a coherent, epitaxial growth of Pd(111) on the individual crystallites of the initially forming, polycrystalline Pd2Ge[111] layer. The crystallization of the Pd2Ge interfacial layer causes a characteristic change in the real-time wafer curvature (tensile peak), and a significant drop of the resistivity after 1.5 nm Pd deposition. In addition, we could confirm the isostructural interface formation of Pd/a-Ge and Pd/a-Si. Subtle differences between both interfaces originate from the lattice mismatch at the interface between compound and metal. The solid-state reaction during subsequent annealing was studied by real-time X-ray diffraction and complementary UHV surface analysis. We could establish the link between phase and microstructure formation during deposition and annealing-induced solid-state reaction: The thermally induced reaction between Pd and a-Ge proceeds via diffusion-controlled growth of the Pd2Ge seed crystallites. The second-phase (PdGe) formation is nucleation-controlled and takes place only when a sufficient Ge reservoir exists. The real-time access to structure and electronic properties on the nanoscale opens new paths for the knowledge-based formation of ultrathin metal/semiconductor contacts.

show abstract

Criterion for silicide formation in transition metal-silicon diffusion couples

Zhang

Ivey

1995

Canadian Metallurgical Quarterly

View full text Add to dashboard Cite

NiSi formation through a semipermeable membrane of amorphous Cr(Ni)

Cited by 18 publications

References 11 publications

Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System

Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System

In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers

Criterion for silicide formation in transition metal-silicon diffusion couples

Contact Info

Product

Resources

About