Nitric acid oxidation method to form SiO2/3C–SiC structure at 120°C

Im, Seong-kyun; Terakawa, Susumu; Iwasa, Hitoo; Kobayashi, Hikaru

doi:10.1016/j.apsusc.2007.10.102

Cited by 10 publications

(7 citation statements)

References 29 publications

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“…SiO 2 -SiC composites are primising materials with potential applications in the microwave area. Several SiO 2 -SiC related composites are investigated by surface processing technique [3][4][5][6][7][8][9][10][11]. Nevertheless, few detailed preparation processes of SiO 2 -SiC composite have been reported.…”

Section: Introductionmentioning

confidence: 99%

Preparation of SiO2–SiC composites with a precursor method

Guan

Fan

Liu

et al. 2009

Ceramics International

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Section: Introductionmentioning

confidence: 99%

Preparation of SiO2–SiC composites with a precursor method

Guan

Fan

Liu

et al. 2009

Ceramics International

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“…It has been claimed that HNO 3 possesses a much higher oxidizing activity than oxygen and water molecules (Imamura et al, 2006) and frequently used as oxidizing agent in Si wet etching process along with hydrofluoric (HF) acid (Tadigadapa, 2009;Yamamura and Mitani, 2008). Besides, HNO 3 solution was widely used to oxidized Si (Imai et al, 2008;Kobayashi et al, 2005) or SiC (Imai et al, 2006;Im et al, 2008), but vaporized HNO 3 was only being reported to oxidized Si (Imamura et al, 2006(Imamura et al, , 2009Kim et al, 2010), respectively. In HNO 3 solution based oxidation method, Si or SiC substrate was immersed in 40 wt.% of HNO 3 aqueous solutions followed by that in 68 wt.% of HNO 3 aqueous at azeotropic boiling temperature of 1218C for 3 hours.…”

Section: Introductionmentioning

confidence: 99%

Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour

Poobalan

Moon

Kim

et al. 2013

Microelectronics International

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Purpose -The high density of defects mainly attributed to the presence of silicon oxycarbides, residual C clusters, Si-and C-dangling bonds at or near the SiO 2 /SiC interface degrades the performance of metal-oxide-semiconductor (MOS) devices. In the effort of further improving the quality and enhancement of the SiC oxides thickness, post-oxidation annealed by a combination of nitric acid (HNO 3 ) and water (H 2 O) vapor technique on thermally grown wet-oxides is introduced in this work. The paper aims to discuss these issues. Design/methodology/approach -A new technique of post-oxidation annealing (POA) on wet-oxidized n-type 4H-SiC in a combination of HNO 3 and H 2 O vapor at various heating temperatures (708C, 908C and 1108C) of HNO 3 solution has been introduced in this work. Findings -It has been revealed that the samples annealed in HNO 3 þ H 2 O vapour ambient by various heating temperatures of HNO 3 solution; particularly at 1108C is able to produce oxide with lower interface-state density and higher breakdown voltage as compared to wet-oxidized sample annealed in N2 ambient. The substrate properties upon oxide removal show surface roughness reduces as the heating temperature of HNO 3 solution increases, which is mainly attributed due to the significant reduction of carbon content at the SiC/SiO 2 interface by CvN passivation and CO or CO 2 out-diffusion. Originality/value -Despite being as a strong oxidizing agent, vaporized HNO 3 can also be utilized as nitridation and hydrogen passivation agent in high temperature thermal oxidation ambient and these advantages were demonstrated in 4H-SiC.

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“…High temperature oxidation degrades the interfacial and surface properties, the sur-faces are roughened considerably. The quality of surface can be improved by heat treatment in pure hydrogen at 400°C [6]. For low temperature oxidation of SiC a plasma oxidation method was developed [7].…”

Section: Introductionmentioning

confidence: 99%

On the topographic and optical properties of SiC/SiO2 surfaces

Jureckova¹,

Jurečková

Chovanec

et al. 2009

Open Physics

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Abstract:The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO 2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.

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Nitric acid oxidation method to form SiO2/3C–SiC structure at 120°C

Cited by 10 publications

References 29 publications

Preparation of SiO2–SiC composites with a precursor method

Preparation of SiO2–SiC composites with a precursor method

Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour

On the topographic and optical properties of SiC/SiO2 surfaces

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Nitric acid oxidation method to form SiO2/3C–SiC structure at 120°C

Cited by 10 publications

References 29 publications

Preparation of SiO2–SiC composites with a precursor method

Preparation of SiO2–SiC composites with a precursor method

Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour

On the topographic and optical properties of SiC/SiO2 surfaces

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Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour