2010
DOI: 10.1016/j.tsf.2010.04.088
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Nitridation and contrast of B4C/La interfaces and X-ray multilayer optics

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Cited by 31 publications
(38 citation statements)
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“…Both La and B were deposited using DC magnetron sputtering. The LaN layer was created using nitrogen assisted growth similar to the approach described in [21]. The layer thicknesses were controlled by pre-calibrated deposition rates.…”
Section: Experiments Layout and Data Processingmentioning
confidence: 99%
“…Both La and B were deposited using DC magnetron sputtering. The LaN layer was created using nitrogen assisted growth similar to the approach described in [21]. The layer thicknesses were controlled by pre-calibrated deposition rates.…”
Section: Experiments Layout and Data Processingmentioning
confidence: 99%
“…La and B are chemically reactive, 10,11 and studies have shown that La and B atoms tend to interdiffuse and form lanthanum borides at the interfaces even during deposition of La/B multilayers. 5,10,11 Recent studies by Makhotkin et al 5,16 suggest that the effective thickness of intermixed regions (i.e., boride interlayers) of as-deposited La/B multilayers (Λ ¼ 3.45 nm;…”
Section: Changes In La/b Multilayered Structuresmentioning
confidence: 99%
“…5,10,11 One of the methods to mitigate lanthanum boride formation is to replace the La layers with LaN, which is thermodynamically more stable. 5,10,11 One of the methods to mitigate lanthanum boride formation is to replace the La layers with LaN, which is thermodynamically more stable.…”
Section: Introductionmentioning
confidence: 99%
“…Similar interface widths were obtained in the case of a Mo/B 4 C multilayer, which was reported to show a 43% reduction in peak reflectance at normal incidence relative to the ideal theoretical case [9]. For La/B 4 C multilayers, interface imperfections have been reported to cause a reduction in peak reflectance over than 40% [12] being in fact the peak theoretical value around 0.65 and the experimental one around 0.40 at 6.7 nm in normal incidence reflectance and un-polarized light; in order to reduce the interface imperfections to some extent, the use of a nitridation process at the interfaces during film deposition has been suggested [17]. In both these previously realized structures, the study and control of the status of the interface was addressed, and specifically in [9] the Mo/B 4 C multilayer interface quality has been deeply studied.…”
Section: Resultsmentioning
confidence: 99%