Nitridation and CVD reactions with hydazine

Abstract

The low-temperature nitridation of gallium arsenide, silicon and transition metals was investigated using hydrazine. Gallium nitride films were grown on gallium arsenide (GaAs)

Surface Chemistry of Prototypical Bulk II−VI and III−V Semiconductors and Implications for Chemical Sensing

“…Exposure of GaAs to ammonia and hydrazine, which have relatively high sticking coefficients on the GaAs surface, leads to passivating films of GaN. For example, hydrazine can react at ∼400 °C, extracting Ga from the surface of the substrate. , The insulating GaN layer that results serves to exclude both holes and electrons from the surface region.…”

“…For example, hydrazine can react at ∼400 °C, extracting Ga from the surface of the substrate. 143,144 The insulating GaN layer that results serves to exclude both holes and electrons from the surface region. Self-assembled alkanethiol monolayers, which have been primarily studied on gold surfaces, have also been prepared on GaAs.…”