Nitridation in Photon-Assisted Process Using Argon Excimer Lamp

Abstract

We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH 4 ) and nitrides the silicon with ammonia (NH 3 ) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp ( ¼ 126 nm, h ¼ 9:8 eV) so that SiH 4 and NH 3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.

A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source

“…with the selected monochromatic light (e.g. hv41.89 eV) to illuminate the surface [27], Al-As bonds can gain enough energy to break. Then, the chemisorbed ammonia molecules can react with Al adatoms to form Al-N bonds.…”