Nitridation of an InP(001) surface by nitrogen ion beams

Suzuki, Yoshiko; Kumano, H.; Tomota, W; Sanada, N.

doi:10.1016/s0169-4332(00)00188-4

Cited by 23 publications

(15 citation statements)

References 16 publications

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“…On the In 4d core level, we observed the disappearance of the component A related to the metallic indium and appearance of two contributions B and C which can be attributed to the formation of nitride layers. Regarding the P 2p core level, a component appears at about 133 eV which is due to the formation of P-N bonds as reported in several papers on the nitridation of InP surfaces [2,3]. P-N bonds are shifted by 4.3 eV from the bulk.…”

Section: Nitridation Of the Inp(100) Surfacessupporting

confidence: 58%

Nitridation of InP(100) surface studied by synchrotron radiation

et al. 2005

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Abstract:The nitridation of InP(100) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450°C has been also analysed. It appears that this system is stable until this temperature, well above the congruent evaporation temperature (370°C) of clean InP(100) : no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [16] studying the InP(100) surfaces I.

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Section: Nitridation Of the Inp(100) Surfacessupporting

confidence: 58%

Nitridation of InP(100) surface studied by synchrotron radiation

et al. 2005

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“…In-N-P and P-N bondings; 2 and plasma nitridation leads to the creation of In-N and P-N bonds. 5 In this article, we are focused on the first steps of InP(100) nitridation using Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS).…”

Section: Direct Nitrogen Ion Beam Nitridation Results In Nitrided Laymentioning

confidence: 99%

“…The designed technology of III-V nitridation can have considerable importance for modern electronics, optoelectronics, quantum devices and other devices of nanometre size but the nitridation of III-V semiconductors is quite difficult because of the small sticking probability of nitrogen on the surface. 2 For InP, several kinds of nitridation processes have been used to produce nitridated films: alkali metals promote nitridation that leads to the formation of mainly InPN x layers; 3,4 …”

Section: Introductionmentioning

confidence: 99%

Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies

Petit

Robert-Goumet

Bideux

et al. 2005

Surface & Interface Analysis

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International audienceThis article investigates the nitridation effect of InP(100) semiconductor surfaces performed by a glow discharge cell (GDS). Electron spectroscopies (AES, ESCA) were used to understand the different steps of this process. An important point is the initial quantity of metallic indium on the InP(100) surfaces. Indeed the indium droplets, created in well known quantity, play the role of precursor. At a relatively low temperature T = 523 K, the system undergoes surface restructuration which includes removal of the In droplets and the elaboration of two InN monolayers. P-N bonds and InN bonds have been detected by the analysis of PLMM and InMNN Auger peaks and In4d ESCA peak. However, the presence or not of metallic indium inside this InN overlayer is crucial for the passivation of the substrate. Ex-situ photoluminescence measurements correlated to the electron spectroscopies results have put i

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“…The addition of N 2 reduces the lateral etching considerably, which is attributed to sidewall passivation. It is found elsewhere for (001) InP that under impact of ~100 eV N + -ions, mainly N-P bonds are formed 15 . It is speculated that formation of these N-P bonds competes with formation of In-Cl bonds and therefore inhibits etching.…”

Section: Temperature Dependence Of Ar/cl 2 -Processmentioning

confidence: 93%

Deep dry etching process development for photonic crystals in InP-based planar waveguides

et al. 2004

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Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etching twodimensional photonic crystals in InP-based materials. Etch rates up to 3.7 m/min and selectivity's to the SiN mask up to 19 are reported. For the removal of indiumchloride etch products both the application of elevated temperatures and high ion energy's are investigated. The reactor pressure is an important parameter, as it determines the supply of reactive chlorine. It is shown, that N 2 passivates feature sidewalls during etching, improving the anisotropy. Ions that impact onto the sidewalls, either directly or after scattering with the SiN-mask or hole interior, cause sidewall etching. Highly directional ion bombardment and vertical sidewalls in the SiN-mask are therefore crucial for successful etching of fine high aspect ratio structures.

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Nitridation of an InP(001) surface by nitrogen ion beams

Cited by 23 publications

References 16 publications

Nitridation of InP(100) surface studied by synchrotron radiation

Nitridation of InP(100) surface studied by synchrotron radiation

Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies

Deep dry etching process development for photonic crystals in InP-based planar waveguides

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