Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy

Abstract

Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of nitridation of GaAs (001) surface. The analysis of the AES results combined with that of RHEED show that the processes taking place during nitridation greatly differ depending on the nitridation temperature. At low temperatures (< 200 o C) nitridation is hindered by kinetic restrictions on atomic migration, whereas at high temperatures (> 500 o C) the process of nitridation takes place simultaneously with the etching of the surface. However, for intermediate temperatures (300 o C ~ 400 o C) the results indicate that a complete monolayer of N atoms may be formed on the substrate during the initial stage of nitridation. The post-nitridation annealing of the samples nitrided at the intermediate temperatures results in the formation of a crystalline GaN layer, the line shape of the AES signals from which is identical to that for a GaN reference sample.

Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence

“…Indeed, the ionicity of the In-N bonds is higher than those of the In-P and In-In bonds due to an increased charge transfer [25]. We note that the value of Pauling electronegativity of In, P and N are 1.78, 2.19 and 3.04, respectively.…”

Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma

“…During this short interval, the incoming N atoms substitute for the P atoms and the formation of In-P-N compound is responsible for the observed Auger shift. Indeed, the ionicity of the In-N bonds is higher than that of the In-P bonds due to an increased charge transfer from the In to anion as phosphorus is substituted by nitrogen [14]. We remind the value of Pauling electronegativity of P and N : 2,19 and 3,04 respectively.…”