Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis

Talbi, A.; Benamara, Z.; Akkal, B.; Gruzza, B.; Bideux, L.; Robert, C.; Varenne, Christelle; Chami, N.

doi:10.1016/j.msea.2006.07.147

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…This step removes all amount of carbon and oxygen contaminant and creates metallic indium droplets at the sub-04002-2 strate surface [5]. Through the consumption of indium droplets by nitrogen atoms in the plasma discharge cell, a thin film of about 25 Å was created on the top of the substrate [6]. Continuous plasma is used as a nitrogen source and the substrate is heated to 250 C.…”

Section: Methodsmentioning

confidence: 99%

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Khediri¹,

Talbi²,

Benamara³

et al. 2021

J. Nano- Electron. Phys.

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In this paper, we present an electrical study of InN thin films elaborated by nitridation of InP (100) substrates. The samples have been obtained using a glow discharge source (GDS) in ultra-high vacuum. The gold (Au) Schottky contact was deposited on the top of the surface. The electrical characteristics of Au/InN/n-InP structure have been investigated using current-voltage and capacitance-voltage methods. We show from the current-voltage characterization at room temperature that the main conduction mechanism is thermionic emission current. A value of 1.57 for the ideality factor of the diode is extracted using analytical methods. Furthermore, the barrier height of the device is evaluated to 0.64 eV. This value is substantially larger than previously reported in the literature. The low saturation current and series resistance (Rs) of 12.3 A and 38 Ω, respectively, indicate the presence of the InN layer. From the capacitance-voltage technique under reverse bias, the built-in potential and the ionized donor concentration are 0.83 V and 1.16  10 17 cm -3 , respectively. A frequency dependent capacitance is measured and attributed to the presence of interface states. Based on the high-low frequency method, we determined the average density of interface states (Nss) with a value of 5.6  10 11 eV -1 cm -2 . These findings reveal good passivation of the InP surface with the use of a thin InN film.

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Section: Methodsmentioning

confidence: 99%

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Khediri¹,

Talbi²,

Benamara³

et al. 2021

J. Nano- Electron. Phys.

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“…Encouraged by the efforts on the exploration of plasma assisted doping strategies for TMDs, the use of remote N 2 plasma treatment for the introduction of nitrogen in MoS 2 as a dopant atom is investigated in this work. N 2 plasma exposure is a practical technique that has been widely used for the incorporation of nitrogen atoms into the lattice of various semiconductors 14,15 and metal gate materials, 16,17 and it has been successfully applied for nitrogen doping of graphene. 18 In the case of monolayer MoS 2 , nitrogen doping is predicted to induce p-type behavior according to first principles calculations.…”

Section: Main Textmentioning

confidence: 99%

Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure

et al. 2016

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Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homojunctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Furthermore, the electrical characterization demonstrates that p-type doping of MoS2 is achieved by nitrogen doping, which is in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen doping concentration and compressive strain in MoS2 is elucidated.

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“…The incorporation of nitrogen (N) atoms into the crystal structure by N 2 plasma treatment is a practical method for modifying the physical and chemical properties of materials [43,44]. With regard to graphene having semimetallic electronic structure, N is considered to be an excellent dopant, which is able to form strong covalent bonds by donating extra electrons into the graphene lattice [45,46].…”

Section: Introductionmentioning

confidence: 99%

Few-layer MoS₂as nitrogen protective barrier

et al. 2017

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We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS on graphene. Surface morphology of our MoS/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS layer is prevented by a very high vertical diffusion barrier, indicating that MoS can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.

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Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis

Cited by 12 publications

References 15 publications

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure

Few-layer MoS₂as nitrogen protective barrier

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Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis

Cited by 12 publications

References 15 publications

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Few-layer MoS2as nitrogen protective barrier

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Product

Resources

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Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure

Few-layer MoS₂as nitrogen protective barrier