Nitridation of Si (100) made by radio frequency plasma as studied by i n s i t u angular resolved x-ray photoelectron spectroscopy

Abstract

Xray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films Summary Abstract: Adsorption and reaction of oxygen on Si(100): A modulated molecular beam and time resolved xray photoelectron spectroscopy study J. Vac. Sci. Technol. A 5, 642 (1987); 10.1116/1.574656An xray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si J. Appl. Phys. 60, 226 (1986); 10.1063/1.337801 Angular resolved xray photoelectron spectroscopy study of reactively sputtered titanium nitride X-ray photoelectron spectroscopy with variable takeoff angles has been used to study the nitridation of Si ( 1(0). The air-oxidized layer on the silicon film has been cleaned off by an Ar radio frequency (rf) plasma, and nitridation was obtained at temperatures around 400 °C in a rf plasma of a NH3 (5% )-N 2 (95%) mixture. NOs) and Si(2p) photoelectrons lines have been analyzed as function of the angle () between the surface of the sample and the detector slit at each step of nitridation to obtain depth profile. These lines have both been decomposed into two components due, on one hand, to the Si-N and the metallic bonds and, on the other hand, to the chemisorbed nitrogen and the N-Si bond. From the integrated intensities of these lines, concentration dependencies on depth and nitridation time have been studied; a nitridation kinetics has been deduced.

Structure and hardness of quaternary TiZrSiN thin films deposited by reactive magnetron co-sputtering

“…4. The characteristic binding energy of TiN [28], ZrN [29,30], TiSi 2 [31], SiN x [30,32] and Si 3 N 4 [33,34] referenced in the literature are indicated by vertical lines. The analysis of XPS data testifies that when adding the silicon to TiZrN film the chemical bonds which are inherent to SiN x and Si 3 N 4 phases are formed.…”

Formation of Silicon Nitride Layer on Microcrystalline Silicon Thin Films by Hot-wire Chemical Vapor Method using Nitrogen and Hydrogen Gases

“…As shown in Fig. 1(a), for all the post-treated films a peak was observed at 397.4 eV, originating from the N bonded to the Si (N-Si peak) (7,8). On the other hand, as shown in Fig.…”

N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films

“…1(a), the untreated film showed no N1s peak. However, for the film treated in N 2 at T f = 1600°C, a peak was observed at 397.4 eV, due to N bonded to Si (N-Si peak) [12,13]. The N-Si peak increased with increasing T f .…”

“…However, the Si-Si peaks of the films treated in N 2 at T f = 1600 and 1900°C were slightly lower than those of the untreated film. As the T f was increased from 1900 to 2000°C, the Si-Si peaks disappeared and a peak at 101.8 eV due to Si bonded to N (Si-N peak) [12,13] appeared and became dominant. The N-Si and the Si-N peaks of the film treated at T f = 2100°C were slightly higher than those at T f = 2000°C.…”