Nitridation of TiSi2 thin films by rapid thermal processing

Pérez‐Rigueiro, José; Jiménez, Carmen; Vázquez, Luís; Pérez‐Casero, R.; Martı́nez-Duart, J.M.

doi:10.1016/0257-8972(95)02688-6

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…Martín-Palma et al 6 observed that titanium contacts to PS become clustered, while aluminum tends to diffuse into the PS layer and after annealing there exists a gradual transition between titanium and the PS layer. Pérez-Rigueiro et al 18 showed that the rapid thermal processing of Ti at 700 • C, in contrast to Al and Au, leads to better electrical performance of the contacts, probably as a consequence of the formation of TiSi 2 compounds. However, these researches just focused on the electrical or structural properties of metal/PS structures after annealing and little attention has been given to the corresponding optical behavior of metalized PS after annealing.…”

Section: Introductionmentioning

confidence: 98%

Surface Metalization on the Photo-Emission, Photo-Absorption and Core-Level Shift of Nanosolid Silicon

Pan

Sun

et al. 2009

Surf. Rev. Lett.

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Cu, Al, and Ti films of ∼10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800 • C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that before annealing just Cu-deposited sample exhibited PL blueshift, PA redshift, and Si-2p level shift due to the Cu diffusion at the surface of PS. While after annealing, Cu-and Ti-deposited samples exhibited obvious PA redshift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.

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Section: Introductionmentioning

confidence: 98%

Surface Metalization on the Photo-Emission, Photo-Absorption and Core-Level Shift of Nanosolid Silicon

Pan

Sun

et al. 2009

Surf. Rev. Lett.

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“…In a previous work, we focused our attention on the nitridation of pure TiSi2 compacts at lower temperatures (1000-1200°C) to produce the matrix of a fibers-reinforced composite [29]. Accordingly to previous papers [30][31][32][33], it was found that the nitridation is sluggish in these conditions because of diffusional limitations. Indeed, the titanium nitridation is easily but silicon reacts very slowly due to the formation of a TiN layer at the surface of the grains.…”

Section: Introductionmentioning

confidence: 99%

Nitridation enhancement of TiSi2 powders by addition of nickel

Roger

Nouvian

Petitcorps

et al. 2017

Journal of Alloys and Compounds

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International audienceThe nitridation enhancement of a TiSi2 powder by nickel addition was examined. The quantities of the added metal were comprised between 2.5 and 25mol.%, the balance being TiSi2. The isothermal heat treatments were made at 1100°C for durations up to 40 hours under normal pressure and continuous flow of pure nitrogen. Comparing to pure TiSi2 powder, an improvement of the conversion in TiN and Si3N4 is obtained for compositions containing 10.0; 12.5 and 15.0 mol.% of nickel. According to the quaternary Ti-Si-Ni-N phase diagram, nickel was found to form Ni4Ti4Si7 compound. Thermogravimetric analysis of these three compositions showed the existence of three successive stages during the conversion. First, an initiate reaction occurred with a very weak weight gain. Then, the second stage exhibited an acceleration of the weight gain. Those two stages are both controlled by nucleation and growth, as represented by the kinetic equation [-ln(1-)] 1/2 = k.t. Finally, the reaction is limited by three-dimension diffusion, as represented by the kinetic equation: [1-(1-) 1/3 ] 2 = k.t. From this behavior, an activation mechanism is proposed

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“…It was then especially interesting to realize our experiments around 1100°C. At this relative low temperature, the main difficulty is the requirement of long time for complete nitridation [21][22][23]. According to the Ti-Si-N phase diagram at 1100°C (Fig.…”

Section: Introductionmentioning

confidence: 99%

Isothermal nitridation kinetics of TiSi2 powders

Roger¹,

Maillé²,

Dourges³

2014

Journal of Solid State Chemistry

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The aim the present work is to determine the reaction kinetics between a TiSi 2 powder with gaseous nitrogen. Isothermal nitridation of TiSi 2 powders with fine (1.4µm) and medium (4.5µm) particle size has been studied in pure nitrogen atmosphere ranging from 1000 to 1200°C for duration up to 50 hours. The isothermal nitridation kinetics of TiSi 2 powders were investigated by thermogravimetry. The nitridation rate strongly depends on the particle size and temperature. The smaller particle size exhibits the higher nitridation rate due to its larger surface area. The conversion process is complex with nucleation and growth of TiN at the surface of the grain and Si 3 N 4 inside the grain promoted by Kirkendall effect with an influence of the volume increase.

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Nitridation of TiSi2 thin films by rapid thermal processing

Cited by 5 publications

References 10 publications

Surface Metalization on the Photo-Emission, Photo-Absorption and Core-Level Shift of Nanosolid Silicon

Surface Metalization on the Photo-Emission, Photo-Absorption and Core-Level Shift of Nanosolid Silicon

Nitridation enhancement of TiSi2 powders by addition of nickel

Isothermal nitridation kinetics of TiSi2 powders

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