Nitride Materials and Devices with Nonpolar Surfaces: Development and Prospects

Paskova, T.

doi:10.1002/9783527623150.ch1

Cited by 14 publications

(17 citation statements)

References 109 publications

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“…The detailed explanation of these differences can be traced back to the mixed symmetry character of the valence band states as obtained from the contribution of the atomic orbitals. As we mentioned in the Introduction, when a QW is grown in A-plane, it is free of internal field [6], and therefore does not show the QCSE. In order to illustrate this fact, Fig.…”

Section: Numerical Resultsmentioning

confidence: 97%

“…These fields, which can be useful in some sensor applications [5], are often detrimental for optoelectronic devices. One possible way out of this problem is the growth of superlattices along nonpolar directions perpendicular to the C-axis, such as the the [1100] (M-axis) or [1120] (A-axis) [6]. On the other hand, the nonpolar heterostructures are expected to exhibit a noticeable in-plane anisotropy as compared to the polar ones grown along the C-axis [7].…”

Section: Introductionmentioning

confidence: 99%

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Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

Molina

García‐Cristóbal

Cantarero

2009

Microelectronics Journal

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The electronic structure of wurtzite semiconductor superlattices (SLs) and quantum wells (QWs) is calculated by using the empirical tight-binding method. The basis used consists of four orbitals per atom (sp 3 model), and the calculations include the spin-orbit coupling as well as the strain and electric polarization effects. We focus our study on GaN/AlN quantum wells grown both in polar (C) and nonpolar (A) directions. The band structure, wave functions and optical absorption spectrum are obtained and compared for both cases.

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Section: Numerical Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

Molina

García‐Cristóbal

Cantarero

2009

Microelectronics Journal

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show abstract

“…In the case of layers having a cubic crystallographic system and being isotropic, in-plane characterization of this deformation is a well established procedure with the relaxation R as the only parameter connected with in-plane strain of the unit cell (mismatch). However, nowadays epitaxial layers with hexagonal materials in different orientations are widely used in industrial lightemitting diode production (Paskova, 2008). In this investigation, a complicated epitaxial relation in combination with an in-plane anisotropy appear (Laskar et al, 2011).…”

Section: Introductionmentioning

confidence: 94%

Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures

Zhylik¹,

Benediktovitch²,

Феранчук³

et al. 2013

J Appl Cryst

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A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy has been developed. A covariant description of relaxation in such structures has been introduced. An iteration method for evaluation of these parameters on the basis of the diffraction data set has been worked out together with error analysis and reliability checking. The validity of the presented theoretical approaches has been proved with a-ZnO on r-sapphire samples grown in the temperature range from 573 K up to 1073 K. A covariant description of relaxation anisotropy for these samples has been estimated with data measured for different directions of the diffraction plane relative to the sample surface.

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“…This opened up the possibility for fabricating nonpolar electronic devices. MOVPE [53] PSPD [124,125] LED [53,58], LD [118 -122] MOVPE [48] HVPE [46] MOVPE [60,62] LED [48] LED [59,61], LD [123] LED [48] LED [60,62] The same group at the USC also demonstrated the first ultraviolet (UV) light-emitting diode using nonpolar a-plane GaN/AlGaN MQWs grown on r-plane sapphire [42]. Even the first experimental prototypes showed a peak emission at 363 nm with intensity almost 30 times stronger than that in the structures grown on the c-plane sapphire.…”

Section: The First Nonpolar Nitride Devicesmentioning

confidence: 99%

Development and prospects of nitride materials and devices with nonpolar surfaces

Paskova

2008

Physica Status Solidi (b)

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IntroductionThe commercial fabrication of lightemitting diodes (LED) and laser diodes (LD) from the ultraviolet to the amber, as well as the development of highpower high electron mobility transistors (HEMT) suitable for numerous telecom applications have been driven by the tremendous improvement in the nitride materials quality. Despite remarkable achievements during the last decade, however, the device performance is hampered by the presence of strong spontaneous and piezoelectric polarization fields along the typical [0001] growth direction in the wurtzite nitride materials [1]. As a consequence of these strong internal fields, the quantum wells (QW), typically used in the active region of optical emitter devices, have a triangular potential profile and the oscillator strength for optical transitions is reduced by several orders of magnitude, depending on the QW thickness [2,3]. A similar deterioration effect is observed in the nitride-based HEMT devices due to a polarization-generated charge. A typical AlGaN/GaN HEMT built in the [0001] growth direction experiences a channel charge of more than 1 × 10 13 cm

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Nitride Materials and Devices with Nonpolar Surfaces: Development and Prospects

Cited by 14 publications

References 109 publications

Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures

Development and prospects of nitride materials and devices with nonpolar surfaces

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