“…Wide-band gap binary semiconductors, such as SiC, GaN, AlN, Ga 2 O 3 , and Si 3 N 4 , have important applications in high-voltage devices, solar-blind photodetectors, and waveguide devices. − Their attributes like high optical transparency, tunable electronic conductivity, and controllable carrier concentration make them attractive in consumer electronics, renewable energy, and transportation. − These materials have wide energy band gaps ( E g ), which make them suitable for optoelectronic applications and photophysical studies in the 100–400 nm ultraviolet (UV) spectral range . Nitrides, in particular, exhibit potential for UV nonlinear optical (NLO) frequency conversion, such as second harmonic generation (SHG), due to their tunable E g and extensive coordination anionic motifs . Anionic groups with different coordination, such as tetrahedra, chain, and other kinds of groups, can produce different macroscopic optical properties, offering great potential for exploring new high-performance NLO crystals …”