Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Lin, Li; Li, Jiayu; Yuan, Qinghong; Li, Qiucheng; Zhang, Jincan; Sun, Luzhao; Rui, Dingran; Chen, Zhaolong; Jia, Kaicheng; Wang, Mingzhan; Zhang, Yanfeng; Rümmeli, Mark H.; Kang, Ning; Xu, Huilong; Ding, Feng; Peng, Hailin; Liu, Zhongfan

doi:10.1126/sciadv.aaw8337

Cited by 86 publications

(51 citation statements)

References 62 publications

(86 reference statements)

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“…Note that indications of such an electron-hole asymmetry in electronic transport was reported in earlier work [115,118]. Finally, note that the same group has recently reported comprehensive results on nitrogen cluster doping [128]. Remarkably, compared to random doping, clustering allows higher mobility for similar electron doping.…”

Section: Magnetoresistance Experiments On Chemically-doped Graphenesupporting

confidence: 59%

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Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

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Chemical doping of graphene is the most robust way of modifying graphene's electronic properties. We review here the results obtained so far on the electronic structure and transport properties of chemically-doped graphene, focusing on the results obtained with scanning tunneling micropscopy/spectroscopy (STM/S), angle-resolved photoemission spectroscopy (ARPES), and magnetoresistance (MR) measurements. The majority of the results reported have been obtained on nitrogendoped samples, but boron-doped graphene has also been well documented. Besides the appearance of the dopant on STM topographic images, the main questions that have been addressed are the atomic configurations of the doping and their doping efficiency (number of electron/hole brought to the graphene lattice). Both can be addressed by a local probe such as STM/S. The doping efficiency has also been complementary studied via direct visualization of the band structure with ARPES. The effect of the dopants on the electronic transport properties and in particular their influence on the scattering mechanisms is also presented. Finally, avenues for future research efforts are suggested.

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Section: Magnetoresistance Experiments On Chemically-doped Graphenesupporting

confidence: 59%

“…Remarkably, compared to random doping, clustering allows higher mobility for similar electron doping. This is explained by the concentration of the scattering sources around the dopants' clusters [128].…”

Section: Magnetoresistance Experiments On Chemically-doped Graphenementioning

confidence: 99%

Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

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“…DOI: 10.1002/adma.202002825 and conversion. It has been demonstrated that introducing dopants in 2D materials can improve the electrical conductivity and catalytic activity, [7,8] tune the bandgap and work function, [9,10] and introduce superconductivity and magnetism. [11,12] For the doped 2D materials, the properties are strongly depended on the doping species and concentration.…”

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confidence: 99%

Superhigh Uniform Magnetic Cr Substitution in a 2D Mo₂C Superconductor for a Macroscopic‐Scale Kondo Effect

Liu

Zhang

et al. 2020

Advanced Materials

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Substitutional doping provides an effective strategy to tailor the properties of 2D materials, but it remains an open challenge to achieve tunable uniform doping, especially at high doping level. Here, uniform lattice substitution of a 2D Mo2C superconductor by magnetic Cr atoms with controlled concentration up to ≈46.9 at% by chemical vapor deposition and a specifically designed Cu/Cr/Mo trilayer growth substrate is reported. The concentration of Cr atoms can be easily tuned by simply changing the thickness of the Cr layer, and the samples retain the original structure of 2D Mo2C even at a very high Cr concentration. The controlled uniform Cr doping enables the tuning of the competition of the 2D superconductor and the Kondo effect across the whole sample. Transport measurements show that with increasing Cr concentration, the superconductivity of the 2D Cr‐doped Mo2C crystals disappears along with the emergence of the Kondo effect, and the Kondo temperature increases monotonously. Using scanning tunneling microscopy/spectroscopy, the mechanism of the doping level effect on the interplay and evolution between superconductivity and the Kondo effect is revealed. This work paves a new way for the synthesis of 2D materials with widely tunable doping levels, and provides new understandings on the interplay between superconductivity and magnetism in the 2D limit.

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“…The electron‐rich nitrogen functions as an electron donor by shifting the Fermi level of carbon species toward the valence band, thereby enhancing electrode conductivity [32] . In particular, graphitic or quaternary N‐Q sitting inside the six‐member ring with the least distortion in graphitic structure is the most efficient at increasing carrier mobilities [33] while N‐6, N‐5, and N‐X have been identified as surface redox centers that enhance the charge density [34] . A high doping level of 6.6 wt% is determined in the CN‐5 electrode.…”

Section: Resultsmentioning

confidence: 99%

3D Printed Supercapacitors toward Trinity Excellence in Kinetics, Energy Density, and Flexibility

Kang

Zeng

Ling

et al. 2021

Advanced Energy Materials

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their poor efficiency in providing areal capacity compels them to be expanded in surface coverage to fulfill a given demand. This distinct contradiction rules out their possibilities to meet the rigorous energy requirements from future electronics. To resolve this issue, the idea of architecting 3D electrodes exploring the benefits along the neglected height direction to increase loading density while conserving footprints, has seen great success and been well-received. [7,8] Conventional methods reported to realize customized 3D geometries in energy devices include transfer print, template assisted structuring, holographic lithography, etc. [9-11] However, the measures either suffer from poor shape retention, or complicated, costly, and timeconsuming procedures. The advent of 3D printing, an additive rapid prototyping technique, able to tailor arbitrary 3D structures on demand in a facile, consistent and rapid manner has attracted considerable attention for the design of supercapacitors [12,13] Among various printing options, direct ink writing (DIW) based on pneumatic extrusion of non-Newtonian inks boasts the advantage of a high content of active materials and desirable freedom in material selection. Therefore, it has been rated the most suitable 3D printing technique for the fabrication of high-performance functional devices. [14-16] Despite that the loading densities and the corresponding energy density of 3D printed devices have shown undeniable superiority to the thin-film counterparts, simple accumulation of masses via layer-by-layer printing creates a matrix wherein the electrolyte travels in a tortuous manner along complicated routes to accomplish charge adsorption/separation. This inevitably incurs sluggish kinetics and significantly degraded rate performance in short reaction timescales, hence severely shackling the practicality and potential of high energy density devices. [17] In addition, imparting structure robustness and mechanical compliance to 3D printed devices is another aspect of pivotal significance to ensure real-world usability, durability, and safety of devices. This desired attribute also enables the potential to be integrated with flexible electronics for 3D printed energy storage devices. [18] Unluckily, the intrinsic fragility of the usually adopted carbonaceous ink elements and their weak supramolecular interaction pose great challenges for 3D printed energy storage devices to realize the much-anticipated flexible feature.

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Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Cited by 86 publications

References 62 publications

Electronic properties of chemically doped graphene

Electronic properties of chemically doped graphene

Superhigh Uniform Magnetic Cr Substitution in a 2D Mo₂C Superconductor for a Macroscopic‐Scale Kondo Effect

3D Printed Supercapacitors toward Trinity Excellence in Kinetics, Energy Density, and Flexibility

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Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Cited by 86 publications

References 62 publications

Electronic properties of chemically doped graphene

Electronic properties of chemically doped graphene

Superhigh Uniform Magnetic Cr Substitution in a 2D Mo2C Superconductor for a Macroscopic‐Scale Kondo Effect

3D Printed Supercapacitors toward Trinity Excellence in Kinetics, Energy Density, and Flexibility

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Product

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Superhigh Uniform Magnetic Cr Substitution in a 2D Mo₂C Superconductor for a Macroscopic‐Scale Kondo Effect