1997
DOI: 10.1016/s0008-6223(96)00142-x
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Nitrogen-containing carbon nanotube growth from Ni phthalocyanine by chemical vapor deposition

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Cited by 145 publications
(74 citation statements)
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“…[16] The commonly measured mobilities of pentacene TFTs (top-contact) are around 0.6 cm 2 V ±1 s ±1 for polycrystalline thin films. [1] In addition, a recently reported bottom-contact pentacene-based TFT gave the best value of 0.48 cm 2 V ±1 s ±1 , [5] a value comparable with our results based on bottom-contact Me 4 PENT TFT (0.30 cm 2 V ±1 s ±1 ). Furthermore, all devices were measured in air, which was expected to yield lower on/off ratios due to the fact that an electron-donating-substituted pentacene is expected to react more exothermically with oxygen than pentacene.…”
supporting
confidence: 92%
See 1 more Smart Citation
“…[16] The commonly measured mobilities of pentacene TFTs (top-contact) are around 0.6 cm 2 V ±1 s ±1 for polycrystalline thin films. [1] In addition, a recently reported bottom-contact pentacene-based TFT gave the best value of 0.48 cm 2 V ±1 s ±1 , [5] a value comparable with our results based on bottom-contact Me 4 PENT TFT (0.30 cm 2 V ±1 s ±1 ). Furthermore, all devices were measured in air, which was expected to yield lower on/off ratios due to the fact that an electron-donating-substituted pentacene is expected to react more exothermically with oxygen than pentacene.…”
supporting
confidence: 92%
“…[1] Organic thin-film FETs have shown charge transport mobilities in the range 0.005±2.1 cm 2 V ±1 s ±1 and on/off current ratios larger than 10 8 in some cases. [1] Unlike oligothiophene-based thin-film transistors (TFTs), [2] where an impressive increase in mobility was achieved through the preparation of new semiconductors or by the introduction of new synthetic methodologies, increased performance of pentacene-based TFTs has been mainly achieved through the development of improved device fabrication techniques including: [3] optimization of the film deposition parameters, [3,4] improvement of morphology, dielectric±semiconductor interfacial properties, and purification of materials. [5] While it may be possible to continue the improvement of device performance by employing device physics and engineering techniques, new materials design and synthesis are viable alternatives for pushing pentacene-based TFTs to a new performance level.…”
mentioning
confidence: 99%
“…It is suggested that the number of carbon atoms in the precursor molecule influences the SWCNT packing density in the template channels. Among other organic compounds, amino-dichloro-s-triazine, pyrolyzed on cobalt-patterned silica substrates, resulted in highly pure CNTs (Terrones et al, 1997) Almost contemporary, organometallic compounds such as metallocene (ferrocene, cobaltocene, nickelocene) (Sen et al, 1997) and nickel phthalocyanine (Yudasaka et al, 1997) were used as the carbon-cumcatalyst precursor; however, as-grown CNTs were highly metal-encapsulated and the yield was very low. Later, pyrolysis of thiophene with metallocene led to the formation of Yjunction CNTs (Satishkumar et al, 2000).…”
Section: New Cnt Precursorsmentioning
confidence: 99%
“…The key to obtaining high yields of pure CNTs is achieving hydrocarbon decomposition on catalyst sites alone and avoiding spontaneous pyrolysis. CNTs have been successfully synthesized using organometallic compounds (nickel phthalocyanine 77 and ferrocene 78 ) as carbon-cum-catalyst precursors, though the as-grown CNTs were mostly metal encapsulated. The use of ethanol has drawn attention for synthesizing SWNTs at relatively low temperatures ( 850°C) on Fe-Co impregnated zeolite supports and Mo-Co coated quartz substrates 79,80,81 .…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%