2020
DOI: 10.1016/j.cej.2019.122282
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Nitrogen defect structure and NO+ intermediate promoted photocatalytic NO removal on H2 treated g-C3N4

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Cited by 293 publications
(118 citation statements)
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“…Liao et al [74] also introduced nitrogen defects into the framework of g-C 3 N 4 by heating the material in powder form in a hydrogen atmosphere; the NO removal rate on this catalyst was 2.6 times that of the original one because of its much narrower band gap, which can promote the separation of photoexcited charge carriers and generate active oxygen more efficiently under visible-light irradiation. In addition, Ma et al [75] reported that the combination of metal oxides could improve the specific surface area of g-C 3 N 4 and promote the separation of photogenerated electrons and holes, and thus, improve its photocatalytic activity.…”
Section: Graphite-phase Carbon Nitride and Its Complexmentioning
confidence: 99%
“…Liao et al [74] also introduced nitrogen defects into the framework of g-C 3 N 4 by heating the material in powder form in a hydrogen atmosphere; the NO removal rate on this catalyst was 2.6 times that of the original one because of its much narrower band gap, which can promote the separation of photoexcited charge carriers and generate active oxygen more efficiently under visible-light irradiation. In addition, Ma et al [75] reported that the combination of metal oxides could improve the specific surface area of g-C 3 N 4 and promote the separation of photogenerated electrons and holes, and thus, improve its photocatalytic activity.…”
Section: Graphite-phase Carbon Nitride and Its Complexmentioning
confidence: 99%
“…[16][17][18][19] Thus, the key technology bottlenecks of photocatalytic CO 2 reduction are the poor charge separation and low efficiency of photocatalyst during the photocatalytic reaction. [20][21][22][23] Combining two semiconductors with different bandgap energy can realize the complementary advantages of the two materials, which is an effective approach to improving photocatalytic efficiency. [24][25][26][27] As a kind of semiconductor polymer photocatalyst, graphite carbon nitride (g-C 3 N 4 ) has drawn extensive attention as it has suitable bandgap energy to absorb visible light, good stability, easy preparation, low cost, and non-toxic.…”
Section: Introductionmentioning
confidence: 99%
“…[2][3][4] However, some shortcomings of g-C 3 N 4 , such as fast recombination of photoinduced electron/ hole pairs, low quantum efficiency and small specific surface area, restricted its application. [5][6][7] There were some strategies to improve its performance, such as elements doping (such as Na, [8,9] Ag, [10,11] B, [12] P, [13] S, [14][15][16] , N, [17] etc.) to tune its band structure, semiconductor coupling (such as TiO 2 , [18][19][20][21] Ag 3 PO 4 , [22][23][24] CdS, [25,26] (BiO) 2 CO 3 , [27] and phosphate, [28] etc.)…”
Section: Introductionmentioning
confidence: 99%