Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis

Shrestha, Santosh; Timmers, H.; Butcher, Kenneth; Wintrebert-Fouquet, M.; Chen, Patrick P.–T.

doi:10.1016/j.nimb.2005.01.022

Cited by 16 publications

(7 citation statements)

References 45 publications

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“…Indeed, significant nitrogen depletion in InN has already been reported after irradiation, implantation or ion beam analysis experiments. [48][49][50][51] Therefore, in our case, a nitrogen release seems to be the most probable phenomenon. This InN dissociation could explain the presence of indium oxide nanograins in the N-depleted region.…”

Section: Indium Nitridementioning

confidence: 49%

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Ruterana

Chauvat

Lorenz

2013

Jpn. J. Appl. Phys.

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The damage generated in wurtzite nitride semiconductors (AlN, GaN, and InN) by 300 keV rare earth ions has been studied following implantation at room temperature of Eu from 1012 to above 1017 ions/cm2. X-ray diffraction (XRD), transmission electron microscopy (TEM) and Rutherford backscattering (RBS) were used to investigate the evolution of damage and the deformation mechanisms versus the fluence. The behavior of the three compounds is clearly different; whereas InN breaks down at low fluences (∼1012 ions/cm2), it is shown that the damage formation mechanisms are similar in AlN and GaN. In both compounds, extended defects such as stacking faults play a critical role but exhibit different stability, as a consequence, GaN transforms to nanocrystalline state from the surface at a fluence of around 2.5×1015 ions/cm2. In contrast, AlN amorphizes starting at the projected range (R p), when the fluence exceeds 1017 ions/cm2.

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Section: Indium Nitridementioning

confidence: 49%

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Ruterana

Chauvat

Lorenz

2013

Jpn. J. Appl. Phys.

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“…14,15) However, InN is too difficult to grow in good quality because it dissociates at lower temperature of about 500 °C. 16) Also the abundance of indium in earth's crust is very low. GaN has a very large electronic band gap.…”

Section: Hot Carrier Coolingmentioning

confidence: 99%

Potential of HfN, ZrN, and TiH as hot carrier absorber and Al₂O₃/Ge quantum well/Al₂O₃and Al₂O₃/PbS quantum dots/Al₂O₃as energy selective contacts

Shrestha¹,

Chung²,

Liao³

et al. 2017

Jpn. J. Appl. Phys.

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The hot carrier (HC) solar cell is one of the most promising advanced photovoltaic concepts. It aims to minimise two major losses in single junction solar cells due to sub-band gap loss and thermalisation of above band gap photons by using a small bandgap absorber, and, importantly, collecting the photo-generated carriers before they thermalise. In this paper we will present recent development of the two critical components of the HC solar cell, i.e., the absorber and energy selective contacts (ESCs). For absorber, fabrication and carrier cooling rates in potential bulk materials — hafnium nitride, zirconium nitride, and titanium hydride are presented. Results of ESCs employing double barrier resonant tunneling structures Al2O3/Ge quantum well (QW)/Al2O3 and Al2O3/PbS quantum dots (QDs)/Al2O3 are also presented. These results are expected to guide further development of practical HC solar cell devices.

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“…The modelling required for RBS analysis to separate this information is therefore eliminated in this technique with a substantial gain in measurement accuracy. Nitrogen loss when using 200 MeV Au ions has proven to be not insignificant; however, molecular recombination model algorithms have been developed to accurately model the nitrogen depletion so that the original stoichiometry of the material can be determined [135,146,147]. An overall accuracy of about 2% can be obtained.…”

Section: Direct Measurementsmentioning

confidence: 99%

InN, latest development and a review of the band-gap controversy

Butcher

Tansley

2005

Superlattices and Microstructures

181

126

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Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis

Cited by 16 publications

References 45 publications

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Potential of HfN, ZrN, and TiH as hot carrier absorber and Al₂O₃/Ge quantum well/Al₂O₃and Al₂O₃/PbS quantum dots/Al₂O₃as energy selective contacts

InN, latest development and a review of the band-gap controversy

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Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis

Cited by 16 publications

References 45 publications

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Potential of HfN, ZrN, and TiH as hot carrier absorber and Al2O3/Ge quantum well/Al2O3and Al2O3/PbS quantum dots/Al2O3as energy selective contacts

InN, latest development and a review of the band-gap controversy

Contact Info

Product

Resources

About

Potential of HfN, ZrN, and TiH as hot carrier absorber and Al₂O₃/Ge quantum well/Al₂O₃and Al₂O₃/PbS quantum dots/Al₂O₃as energy selective contacts