Nitrogen doped carbon aerogel composites with TiO<sub>2</sub> and ZnO prepared by atomic layer deposition

Bakoš, L.; Mensah, Joshua; László, Krisztina; Parditka, Bence; Erdélyi, Zoltán; Székely, Edit; Lukács, István Endre; Cserháti, Csaba; Zhou, Chen; Seo, Jin Won; Halasi, Gyula; Szilágyi, Imre Miklós

doi:10.1039/c9tc05953a

Cited by 12 publications

(8 citation statements)

References 46 publications

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“…According to the Langmuir adsorption isotherm, the number of surface hydroxyl groups strongly depends on the vapor pressure of the oxidant precursor. [ 23 ] The vapor pressure of H 2 O 2 is 18.4 Torr, which is lower than that of H 2 O (23.8 Torr) at room temperature. The relatively lower density of OH groups leads to a lower GPC for SbO x using SbCl 5 and H 2 O 2 .…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Yang

Bahrami

Ding

et al. 2022

Adv Elect Materials

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SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD‐SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with a SbOx dielectric layer deposited at 200 °C from Sb(NMe2)3 and H2O2 presents excellent performance, such as a field effect mobility (µ) of 12.4 cm2 V−1 s−1, Ion/Ioff ratio of 4 × 108, subthreshold swing of 0.22 V dec−1, and a trapping state (Ntrap) of 1.1 × 1012 eV−1 cm−2. The amorphous structure and high areal capacitance of SbOx boosts the interface between the semiconductor and dielectric layer of TFT devices and provide a strong electric field for electrons to improve the device mobility.

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Section: Resultsmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Yang

Bahrami

Ding

et al. 2022

Adv Elect Materials

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“…The metal element content in composites was determined via inductively coupled plasma−optical emission spectroscopy (ICP-OES, iCAP PRO, ThermoFisher, U.S.A.) after digestion with nitric and sulfuric acid. 41 The porosity measurement of the composite was conducted by using an atomic force microscope (AFM, SPA400, Japan). The method referred to the literature, and the stiffness coefficient of 3 N• m −1 was applied.…”

Section: Methodsmentioning

confidence: 99%

“…The metal element content in composites was determined via inductively coupled plasma–optical emission spectroscopy (ICP-OES, iCAP PRO, ThermoFisher, U.S.A.) after digestion with nitric and sulfuric acid …”

Section: Experimental Sectionmentioning

confidence: 99%

Lightweight and Flexible Bi@Bi-La Natural Leather Composites with Superb X-ray Radiation Shielding Performance and Low Secondary Radiation

Zhong

Xiao

et al. 2020

ACS Appl. Mater. Interfaces

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A high-shielding, low secondary radiation, lightweight, flexible, and wearable X-ray protection material was prepared by coimpregnating La 2 O 3 and Bi 2 O 3 nanoparticles in natural leather (NL) with an additional Bi 2 O 3 coating at the bottom surface of the leather. The prepared Bi 28.2 @Bi 3.48 La 3.48 −NL (28.2 and 3.48 mmol•cm −3 are the loading contents of elements) showed excellent X-ray shielding ability (65−100%) in a wide energy range of 20−120 keV with reduced scattered secondary radiation (30%). The bottom surface coating played a critical role in enhancing the X-ray attenuation and reducing the scattered secondary radiation by reflecting and deflecting incident X-ray photons. Excellent mechanical property with superb bending resistance of the NL matrix was properly maintained, and its tensile strength and tearing load were 15.39 MPa and 25.81 N•mm −1 , respectively. This lightweight and wearable high-performance protection material can facilitate safety and comfortability during intensive activities of practitioners in the health care industry.

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“…Early reports of ALD on aerogels focused on Al 2 O 3 and ZnO coatings on silica aerogels . ALD-coated aerogels have been subsequently used for a variety of applications, including dye-sensitized solar cells, − battery electrodes, − water purification, , and catalysis. − Characterization of ALD coatings on aerogels has been performed using high-resolution microscopy, , mass gain and surface area measurements, and elemental mapping on the tens-to-hundreds of micrometers scale. , However, despite these promising examples, evidence of ALD conformality on millimeter scale, ultra-high-aspect-ratio aerogel monoliths (AMs) is scarce in the literature. To our knowledge, no papers have quantitatively demonstrated ALD conformality on aerogels with aspect ratios greater than 5000:1. , In this study, we demonstrate a process for coating ultra-high-aspect-ratio (>60000:1) AMs, which can enable the use of millimeter-scale aerogels as “bulk” materials in new application spaces such as concentrated solar thermal (CST) technologies, thermal insulation, and catalysis.…”

Section: Introductionmentioning

confidence: 99%

“…23 ALD-coated aerogels have been subsequently used for a variety of applications, including dyesensitized solar cells, 24−26 battery electrodes, 27−29 water purification, 30,31 and catalysis. 32−36 Characterization of ALD coatings on aerogels has been performed using high-resolution microscopy, 37,38 mass gain and surface area measurements, 36 and elemental mapping on the tens-to-hundreds of micrometers scale. 39,40 However, despite these promising examples, evidence of ALD conformality on millimeter scale, ultra-highaspect-ratio aerogel monoliths (AMs) is scarce in the literature.…”

Section: ■ Introductionmentioning

confidence: 99%

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

et al. 2021

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Atomic layer deposition (ALD) modification of ultra-high-aspect-ratio structures (>10000:1) is a powerful platform with applications in catalysis, filtration, and energy conversion. However, the deposition of conformal and tunable ALD coatings at these aspect ratios remains challenging, resulting in empirical trade-offs between the precursor utilization and reaction time. Here, we demonstrate tunable control of the ALD infiltration depth into an aerogel monolith (AM) and develop a reaction-diffusion model to accurately describe the coating process. Specifically, we investigate the ALD exposure time and precursor dose needed to conformally coat a silica AM with pore sizes of ∼20 nm, a monolith thickness of ∼2.5 mm, and aspect ratios exceeding 60000:1. We demonstrate complete infiltration into the AM, which is quantified by elemental mapping. A reaction-diffusion model is developed, which accounts for multiple doses and the precursor depletion in the ALD chamber during an exposure step. The experimentally validated model enables the prediction and tuning of infiltration depth into a tortuous, high-aspect-ratio structure such as an AM, allowing for the synthesis of rationally designed material architectures. Additionally, the model allows for co-optimization of the total deposition time and percentage of unreacted precursor, which are important for the manufacturability and sustainability of ALD processing. Lastly, we demonstrate that ultrathin ALD Al2O3 coatings can be used to stabilize silica AMs against structural degradation under high-temperature annealing conditions (700–800 °C) by limiting changes in the surface area and monolith volume. This improved high-temperature stability has implications for numerous aerogel applications, including catalysis and thermal insulation.

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Nitrogen doped carbon aerogel composites with TiO₂ and ZnO prepared by atomic layer deposition

Abstract: A nitrogen doped carbon aerogel was used as a substrate for the atomic layer deposition of TiO2 and ZnO layers in various thicknesses.

Cited by 12 publications

References 46 publications

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Lightweight and Flexible Bi@Bi-La Natural Leather Composites with Superb X-ray Radiation Shielding Performance and Low Secondary Radiation

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

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Nitrogen doped carbon aerogel composites with TiO2 and ZnO prepared by atomic layer deposition

Abstract: A nitrogen doped carbon aerogel was used as a substrate for the atomic layer deposition of TiO2 and ZnO layers in various thicknesses.

Cited by 12 publications

References 46 publications

Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors

Lightweight and Flexible Bi@Bi-La Natural Leather Composites with Superb X-ray Radiation Shielding Performance and Low Secondary Radiation

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

Contact Info

Product

Resources

About

Nitrogen doped carbon aerogel composites with TiO₂ and ZnO prepared by atomic layer deposition

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors