Nitrogen‐Doped Carbon Quantum Dots on Graphene for Field‐Effect Transistor Optoelectronic Memories

Abstract

The development of field‐effect transistor‐based (FET‐based) non‐volatile optoelectronic memories is vital toward innovations necessary to improve computer systems. In this work, for the first time, the unique charge‐trapping and charge‐retention properties of solution‐processed colloidal nitrogen‐doped carbon quantum dots (CQDs) are harnessed to achieve functional optoelectronic memories programmable by UV illumination with a multilevel writing possibility. Of particular note, long‐lasting memory function can be achieved thanks to the vast charge trapping sites provided by the N‐doped CQDs and the resultant photo‐gating effect is exercised on the graphene FET. The achieved memory can be erased by a positive gate bias which provides sufficient carriers to remove trapped charges through recombination. This study highlights the possibility to engineer high‐performance all‐carbon non‐volatile FET‐based optoelectronic memories through manipulating and coupling the charge‐trapping properties of colloidal CQDs and graphene.

Recent Advances in the Raman Investigation of Structural and Optical Properties of Graphene and Other Two-Dimensional Materials

“…By identifying the doping levels, Raman spectroscopy enables the fine-tuning of the electronic properties of these transistors, directly affecting their speed and energy efficiency. Additionally, the technique provides valuable data on heat generation and dissipation within the FETs, contributing to their long-term stability and performance [92][93][94][95].…”