Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition

Ko, Kyung Yong; Kang, Hyung Seok; Lee, Wonseon; Lee, Chang Wan; Park, Jusang; Lee, Hee Sung; Im, Seongil; Kim, Han Gil; Kim, Soo Hyun; Min, Byung-Wook

doi:10.1016/j.mssp.2015.02.004

Cited by 19 publications

(6 citation statements)

References 38 publications

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“…The calculated R values under UV illumination at 2 V are given in the Table . As expected, the R -values exhibit variations depending on the annealing temperature, and the maximum R -value is obtained to be 126 mA/W for the photodiode annealed at 550 • C. This value is good; it is even better than previously reported R -values in the literature of the same incident UV wavelength for similar n-ZnO/p-Si heterojunction photodiodes [4,43]. However, the obtained R -value should be improved compared to the specialized nanowire structure of ZnO 2 -based photodiodes for UV detection [14]. Nevertheless, the device annealed at 550 • C exhibits promising performance for UV sensing applications.…”

Section: Resultsmentioning

confidence: 54%

“…Hu et al [13] reported that formation of Ag nanoparticle improves the photodiode sensitivity due to light scattering of the embedded Ag nanoparticles, which increase the numbers of generated pairs. Ko et al [14] reported that nanowire formation enhances the UV sensitivity of the photodetectors almost * Correspondence: senolkaya52@gmail.com three times because the generated e-h pairs can be easily transported to electrodes with lower annihilation. The annihilation of the generated e-h pairs during current transport significantly degrades the photosensitivity of the devices.…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Kaya¹

2019

Turk J Phys

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The aim of this study is to investigate the influences of annealing temperature on initial device characteristics and their correlations with ultraviolet (UV) radiation sensitivity of n-type zinc oxide/p-silicon (n-ZnO/p-Si) heterojunction photodiodes. Evolutions on the crystalline structure, surface morphology, ideality factor, barrier potential, interface state density, and donor concentration were systematically analyzed during the initial device characterizations before testing the UV sensitivities of the photonic devices. The results demonstrate that the sensitivity of each n-ZnO/p-Si photodiode annealed at various temperatures was linearly correlated with different UV illumination intensities. The devices annealed at 750 • C and 550 • C exhibit more sensitive performance than devices annealed at 150 • C and 350 • C owing to lower dark currents and good oxide quality. However, the presence of an interfacial suboxide or silicate oxide layer significantly decreased the responsivity of the photodiodes annealed at 750 • C. The maximum responsivity value was 126 mA/W for the photodiode annealed at 550 • C. It can be concluded that the photodiode annealed at 550 • C exhibits promising performance for UV sensing applications.

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Section: Resultsmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Kaya¹

2019

Turk J Phys

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“…PbSe quantum dot solar cells were not affected by the nitrogen doping, revealing that the performance improvement is dependent on whether recombination is dominant in the absorber layer or at the interface. 65 The lower carrier concentration improved rectification in photodiodes, 107 increased ZnO UV emission in LEDs, 111 improved TFT switching over ZnO 87 and dependence of performance on atmosphere is removed. 173…”

Section: Carrier Concentration Controlmentioning

confidence: 99%

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Burgess

2017

Materials Science and Technology

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Atomic layer deposition (ALD) is an increasingly popular thin film deposition technique which offers unique large area capability combined with excellent conformality, thus ALD will likely be important in the development of next generation optoelectronic devices. Such device platforms include solar cells, thin film transistors and light emitting diodes, and in all of these technologies one material is frequently used – zinc oxide (ZnO) – owing to its excellent electrical and optical properties combined with earth abundance. The approaches and achievements in tailoring the properties of ALD ZnO are discussed. Key process variables include deposition temperature and purge times as well dopant incorporation, with particular attention paid to tuning band alignment and carrier concentrations (focusing on lower carrier concentration applications). This review was submitted as part of the 2016 Materials Literature Review Prize of the Institute of Materials, Minerals and Mining run by the Editorial Board of MST. Sponsorship of the prize by TWI Ltd is gratefully acknowledged.

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“…Chatzigiannakis et al have recently reported only photocurrent spectra of an ALD grown ZnO/Si n-n isotype heterojunction photodetector. Similarly, a few other reports are also available, − but detailed investigation and analyses such as photocurrent transients, photosensitivity, response time, stability, low power detectability, and photoresponse under frequency-modulated illuminations have not been performed to show the ZnO/Si isotype junction as a high-performance broadband photodetector.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n⁺-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

Mondal

Halder

Basak

2023

ACS Appl. Electron. Mater.

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A high-performance broadband photodetector has attracted significant attention due to its wide range of applications. We report an n+-ZnO/n-Si isotype heterojunction by depositing ZnO nanorods followed by a ZnO thin film on an n-type undoped Si wafer for detecting a broad wavelength from 300 to 940 nm with a high speed under reverse as well as zero bias conditions. Under 1.5 V reverse and zero bias, the device provides responsivity values up to ∼200 and ∼13 mA/W respectively. Under self-bias, the n+-ZnO/n-Si heterojunction exhibits up to 1.2 × 103 photosensitivity. The n+-ZnO/n-Si heterojunction can detect power as low as 10–12 μW/cm2. A photoresponse up to 2 kHz modulated illuminations has been measured, and the ultrafast n+-ZnO/n-Si heterojunction provides a stable and rapid photoresponse with a response time in the 60–120 μs range. The n+-ZnO/n-Si heterojunction exhibits a −3 dB cutoff frequency of >2000 and 1100 Hz under reverse and zero bias, respectively. Therefore, we unprecedentedly demonstrate an n+-ZnO/n-Si isotype heterojunction as a potential candidate for detecting light in a broad ultraviolet to infrared region with a very high speed and >1 kHz frequency bandwidth as well.

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Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition

Cited by 19 publications

References 38 publications

Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n⁺-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

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Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition

Cited by 19 publications

References 38 publications

Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n+-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

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Product

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Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n⁺-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth