Nitrogen-Doping Effects on Electrical Properties of Hydrogenated Microcrystalline Silicon as Studied by Electron Paramagnetic Resonance and Conductivity

Abstract

We have examined Raman scattering, X-ray diffraction, electron paramagnetic resonance (EPR) spectra and the conductivity of nitrogen-doped hydrogenated microcrystalline silicon. The EPR signals due to conduction electrons have been observed in the doped films, except for highly doped samples that have no microcrystalline fraction. The result indicates that the doped nitrogen atom acts as an electron donor in the microcrystalline silicon. The temperature dependence of the conductivity clarify that the activation energy depends on the doping level. The influence of the doping level on the conductivity can be interpreted in terms of the balance of the effective electron donation and the decrease of carrier mobility due to a decrease of the microcrystalline phase volume ratio. At temperatures lower than approximately 180 K, the conductivity shows little variation. This is explained using a model of the hopping conduction, in terms of defect states for all samples.

Novel ordered nanoporous graphitic C3N4as a support for Pt–Ru anode catalyst in direct methanol fuel cell

“…It was reported that nitrogen atoms, known as electron donors, increase the electrical conductivity or decrease resistivity in semiconductor or oxide ceramic. 27 The higher performance of Pt-Ru/C 3 N 4 can be attributed to surface properties of the C 3 N 4 network such as graphiticity and framework N atoms, which can facilitate electron transfer through the conduction layer, 21b which necessitates further study.…”

Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

“…[1][2][3][4] On the other hand, there are only few reports on silicon deposition in open air, 5,6) despite the importance of silicon deposition in device fabrication. This is mainly due to the following two reasons: the susceptibility of silicon film characteristics to air contamination 7,8) and the hazardous nature of source materials such as silane (SiH 4 ). 9) In conventional low-pressure silicon deposition, it is well known that film characteristics depend significantly on air contamination such as nitrogen (N 2 ) and oxygen (O 2 ).…”

“…9) In conventional low-pressure silicon deposition, it is well known that film characteristics depend significantly on air contamination such as nitrogen (N 2 ) and oxygen (O 2 ). 7,8) These elements act as an electron donor in the case of low incorporation and disrupt crystalline growth in the case of high incorporation. The device performance also deteriorates proportionally to their concentration.…”