Nitrogen-doping induces tunable magnetism in ReS2

Abstract

Transition metal dichalcogenides (TMDs) are promising for spintronic devices owing to their spin-orbit coupling and loss of inversion symmetry. However, further development was obstructed by their intrinsic nonmagnetic property. Doping TMDs with non-metal light atoms has been predicted to be a good option to induce unexpected magnetic properties which remain rarely explored. Here, we utilize nitrogen doping to introduce magnetic domains into anisotropic ReS 2 , giving rise to a transition from nonmagnetic to tunable magnetic ordering. Both of the experimental and computational results confirmed that the N-doping in ReS 2 prefers to take place at the edge site than in-plane site. With controlled doping concentration, it exhibits a unique ferromagnetic-antiferromagnetic (FM-AFM) coupling. Assisted by theoretical calculations, we demonstrated that FM-AFM coupling presents a strong link to doping contents and doping sites. Wherein, the FM ordering mostly comes from N atoms and the AFM ordering originate from Re atoms. At the N-doping content of 4.24%, the saturated magnetization of N-doped ReS 2 reached the largest value of 2.1 emu g −1 at 2 K. Further altering the content to 6.64%, the saturated magnetization of N-doped ReS 2 decreases, but exhibits a distinct exchange bias (EB) phenomenon of around 200 Oe. With controlled N-doping concentrations, the intrinsic spin in ReS 2 could be well altered and resulted in distinct magnetism, presenting tremendous potential for spintronic devices in information storage.

Biaxial Strain‐Mediated Room Temperature Ferromagnetism of ReS2 Web Buckles

“…[39]. [26] As shown in Figure 3f, the tensile biaxial strain would help create the vacancies. Intriguingly, after buckling the saturation magnetization (M s ) of the web buckles is enhanced to be 0.370 emu g −1 .…”

Electron dynamics in strained graphene

“…Several approaches have been developed to manipulate strain via deformations in graphene, and we discuss a few representatives ones in this section. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] In the following we classify the strain/deformation engineering methods into two groups: (i) substrate-based approaches, where the substrates determine the deformation/strain profile; and (ii) mechanical approaches, where direct manipulation of the sample using external forces, determines the resulting strain profile.…”

“…1(a) upper row). [17][18][19][20][21] Graphene is deformed in the area that lies directly on top of these structures and in the areas between adjacent units (e.g. wrinkles formed between nanopillars).…”

“…This is particularly evident for work involving deformed samples, in which electronic properties are fundamentally altered due to the presence of strain. 15,16 The realization that strain exists in supported and suspended samples, and can be introduced by substrates as well as by imaging techniques, [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] had opened the door to a large number of proposals that take advantage of these effects, giving rise to the new field of 'straintronics'. 16,37 As strain appears to be ever-present, a clear understanding of its effects becomes essential for appropriate strain-designed engineering.…”

Анизотропные Триггерные Электрические Свойства Двумерных Сверхрешеток

“…В последнее время (в связи с появлением графеновых сверхструктур) возобновился интерес к двумерным сверхрешеткам (СР) [1][2][3][4][5][6][7][8][9][10]. Магнитные свойства подобных СР исследовались, например, в [6].…”