Nitrogen doping of graphene by CVD

Zan, Recep; Altuntepe, Ali

doi:10.1016/j.molstruc.2019.127026

Cited by 36 publications

(20 citation statements)

References 23 publications

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“…In the second step, the Ov/NiCo 2 O 4 samples obtained were doped with N using a CVD system (Thermal CVD 50D, SCEN Tech). 22,23 The product was loaded into a quartz boat, along with 0.2 g of urea (CH 4 N 2 O), after which the two quartz boats were placed into a CVD tube furnace. The reactor chamber was evacuated using a combination of rotary and turbopumps, and the Ar flow rate was maintained at 100 SCCM for 30 min while being heated to 350 C. A stable supply of elemental nitrogen was achieved using Ar as the carrier gas.…”

Section: Synthesis Of N-ov/nico 2 O 4 On CCmentioning

confidence: 99%

N‐doped oxygen vacancy‐rich NiCo ₂ O ₄ nanoarrays for supercapacitor and non‐enzymatic glucose sensing

Seong

Patil

Roy

et al. 2022

Intl J of Energy Research

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Summary Battery‐type transition metal oxides (TMOs) gained great attention as an electrode in a supercapacitor (SC) owing to their high electrochemical activity, however, the performance of SCs influenced by low intrinsic conductivity and lower cycling stability. To address the issues, we propose an effective strategy of nitrogen doping and increasing the oxygen vacancies of hydrothermally synthesized nickel‐cobalt oxide (N‐Ov/NiCo2O4‐350) nanowire arrays. The modified electrode has a variable superficial nanoporous architecture and a favorable electronic structure resulting in a greatly increased specific surface area and a suitable electron/ion diffusion network. The synthesized hybrid electrode exhibited a specific capacity of 256 mAh g−1 and a high energy density of 83.18 Wh kg−1 at 203.1 W kg−1. Likewise, a non‐enzymatic glucose sensor with N‐Ov/NiCo2O4‐350 achieved a broad linear detection range of 0–555 mM, an ultra‐high sensitivity of 29 811.53 μA·mM−1·cm−2, a short response time of approximately 2.2 s, and a low detection limit of 0.02 μM (S/N = 3). The superior electrochemical and glucose‐sensing capabilities of the N‐Ov/NiCo2O4‐350 hybrid nanostructure demonstrated the potential of the electrode.

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Section: Synthesis Of N-ov/nico 2 O 4 On CCmentioning

confidence: 99%

N‐doped oxygen vacancy‐rich NiCo ₂ O ₄ nanoarrays for supercapacitor and non‐enzymatic glucose sensing

Seong

Patil

Roy

et al. 2022

Intl J of Energy Research

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“…As a result, in contrast to nitrogendoped graphene synthesis via pyridine, the methane did not improve the quality of the graphene film. [9] As a final investigation on the graphene films in this research, the optical transmission values were determined. The findings indicated that maximum optical transmission (88%) at 633 nm wavelength was obtained and transmission value was calculated to be around 82% for the visible region (400À800 nm) for the boron-doped graphene film on the glass substrate.…”

Section: Resultsmentioning

confidence: 99%

“…The aim here was to evaluate the effect of CH 4 on the growth process because the usage of CH 4 was previously found to be an effective parameter on the growth of the nitrogen-doped graphene film via pyridine. [9] The quality of the synthesized doped graphene films was evaluated using various techniques. To do this, Raman spectrometer, X-ray photoelectron spectrometer (XPS), and atomic force microscope (AFM) were utilized.…”

Section: Methodsmentioning

confidence: 99%

“…Various doping sources like ammonia, diborane, pyridine, boric acid, and triethylborane (TEB) can be used to grow graphene films by the integration of boron and nitrogen atoms. [6][7][8][9] As some theoretical studies have demonstrated, boron and nitrogen atoms could substitute the carbon atoms in the graphene lattice. Furthermore, studies on nitrogendoped graphene synthesis are more common in the literature in comparison with those on boron-doped graphene.…”

Section: Introductionmentioning

confidence: 99%

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Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

Zan

2021

Physica Status Solidi (a)

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Herein, the synthesis of a stable and homogeneous boron‐doped graphene film using triethylborane as a single source of carbon and boron is reported. The effects of triethylborane amount and growth time on the synthesis of doped graphene are investigated under the same growth conditions on polycrystalline copper foil in a three‐zone chemical vapor deposition (CVD) system, which has not thus far been researched in detail. The findings show that boron‐doped graphene films are successfully synthesized. The results enable the design of a recipe for thin‐film doped graphene grown with optimum optical transmission and sheet resistance via amending TEB molarity and growth time. Such changes suggest that the single‐layer graphene film with high homogeneity can be obtained for the film grown using 0.5 m triethylborane along with 10 min growth time as confirmed by Raman mapping and atomic force microscope (AFM) measurements. It is further revealed that increasing the amount of triethylborane and growth times leads to the formation of thicker graphene films. In addition, X‐ray photoelectron spectrometer (XPS) measurements indicate that boron atoms get into a honeycomb structure, thanks to substitutional doping. The findings of this study have significant implications for the implementation of boron‐doped graphene films in semiconductor‐based technology.

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“…The CVD-grown graphene was transferred on the flexible silver/PET substrate through the copper etching technique, as reported in previous literature [39][40][41][42].…”

Section: Transfer Process Of Few-layer Graphene On the Desired Substratementioning

confidence: 99%

Chemical vapor deposited graphene-based quasi-solid-state ultrathin and flexible sodium-ion supercapacitor

Khan

Shakya

Bhardwaj

et al. 2022

J. Electrochem. Sci. Eng.

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Flexible electronic devices find wide application in wearable electronics and foldable gadgets. This article reports chemical vapor deposited (CVD) few-layers graphene for a solid-state flexible supercapacitor device. Raman spectroscopy analysis reveals up to five layers in the graphene samples. Polyvinyl alcohol-Na2SO4 hydrogel membrane is used as a gel polymer electrolyte (GPE). 50 nm thick silver (Ag) deposited on polyethylene terephthalate (PET) through E-beam deposition served as the flexible current collector for the device. Galvanostatic charge-discharge (GCD) executed on the fabricated device to analyze its electrochemical performance yielded a specific areal capacitance of 15.3 mF cm-2 at 0.05 mA cm-2 current density. The obtained power density of the fabricated device is 0.53 µWh cm-2 at a power density of 25 µW cm-2.

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Nitrogen doping of graphene by CVD

Cited by 36 publications

References 23 publications

N‐doped oxygen vacancy‐rich NiCo ₂ O ₄ nanoarrays for supercapacitor and non‐enzymatic glucose sensing

N‐doped oxygen vacancy‐rich NiCo ₂ O ₄ nanoarrays for supercapacitor and non‐enzymatic glucose sensing

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

Chemical vapor deposited graphene-based quasi-solid-state ultrathin and flexible sodium-ion supercapacitor

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Nitrogen doping of graphene by CVD

Cited by 36 publications

References 23 publications

N‐doped oxygen vacancy‐rich NiCo 2 O 4 nanoarrays for supercapacitor and non‐enzymatic glucose sensing

N‐doped oxygen vacancy‐rich NiCo 2 O 4 nanoarrays for supercapacitor and non‐enzymatic glucose sensing

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

Chemical vapor deposited graphene-based quasi-solid-state ultrathin and flexible sodium-ion supercapacitor

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N‐doped oxygen vacancy‐rich NiCo ₂ O ₄ nanoarrays for supercapacitor and non‐enzymatic glucose sensing

N‐doped oxygen vacancy‐rich NiCo ₂ O ₄ nanoarrays for supercapacitor and non‐enzymatic glucose sensing