Nitrogen incorporation and lattice constant of strained dilute<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi><mml:msub><mml:mi mathvariant="normal">As</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>layers on GaAs (001): An<i>ab initio</i>study

Shtinkov, N.; Desjardins, P.; Masut, R. A.; Côté, Michel

doi:10.1103/physrevb.74.035211

Cited by 13 publications

(8 citation statements)

References 42 publications

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“…All four spectra in Figs. 8,10 This calibration factor is close to the value one would expect for a linear interpolation of the lattice constant between GaAs and GaN, following Vegard's law. The sample with the strong in-gap emission in Fig.…”

Section: Resultssupporting

confidence: 76%

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Zangenberg

Beaton

Tiedje

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy AIP Advances 4, 027114 (2014); 10.1063/1.4866445Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar In x Ga 1 − x N Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary IIInitride layers grown by molecular beam epitaxy J. Appl. Phys.Dilute nitride semiconductors of composition GaAs 1−x N x ͑0.0017Ͻ x Ͻ 0.0115͒ are grown by plasma-assisted molecular beam epitaxy with a helical resonator plasma source for active nitrogen. The plasma source is self-starting at the operating pressure and can be operated at two different frequencies for which the emission spectrum is dominated by N 2 molecules or by N atoms. For the same power the molecular-rich mode is found to produce a higher flux of active nitrogen. After extended operation the plasma tube becomes contaminated with As which reduces the flux of active nitrogen and creates a below band gap emission band in the photoluminescence of the GaAs 1−x N x . For the clean discharge tube no difference is observed in the photoluminescence for samples grown in the molecule-rich or atom-rich mode.

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Section: Resultssupporting

confidence: 76%

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Zangenberg

Beaton

Tiedje

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…In principle it is possible that the surfactant does not actually increase the N concentration but rather causes the nitrogen to incorporate into a different site in the lattice since we are inferring the nitrogen concentration only from x-ray diffraction measurements of the lattice constant. For example in GaAs1-yNy grown by metal organic chemical vapour deposition, there is evidence for non-substitutional N when y>3% [30,34,35]. However non-substitutional nitrogen is unlikely to be the explanation for the lattice constant changes that occur in the surfactant growth experiments discussed here.…”

Section: Mbe Growth With Bismuthmentioning

confidence: 69%

Growth and properties of the dilute bismide semiconductor GaAs<SUB align=right>1−xBi<SUB align=right>x a complementary alloy to the dilute nitrides

Tiedje¹,

Young²,

Mascarenhas³

2008

IJNT

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In this review we describe the growth and properties of the dilute bismide semiconductor alloy GaAs 1-x Bi x and show how its properties are in certain respects complementary to the dilute nitride alloy, GaNyAs1-y. Like the dilute nitrides the dilute bismides show a giant band gap bowing effect in which a small concentration of the alloying element has a disproportionate effect on the band gap, however in the case of the bismide the band gap reduction is associated with an increase in the energy of the valence band maximum (VBM) rather than a reduction in the energy of the conduction band minimum (CBM). Under standard GaAs growth conditions Bi acts as a surfactant with associated improvements in surface quality. In order to incorporate Bi, growth temperatures below 400 o C are used with As2/Ga flux ratios close to unity. The electron mobility of GaAs is only weakly affected by Bi alloying, in contrast to the dilute nitrides where the electron mobility decreases rapidly with N alloying. Bi alloying also produces a giant bowing effect in the spin orbit splitting in the valence band. Strong room temperature photoluminescence is observed. Prospects for future device applications of this new compound semiconductor alloy are discussed.

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“…19 In GaAs, while an isolated V Ga defect is nonradiative, donor-V Ga complexes generate radiative centers evidenced by a band located about 320 meV below the gap with a FWHM close to 180 meV. 23,24 The energy position and FWHM of the low-energy emission in our samples, together with the annealing dependance of its intensity, thus, strongly suggests that the deep radiative center at its origin involves a N-bound Ga vacancy, possibly stabilized and optically activated by hydrogen. They also reported a fivefold decrease of the V Ga concentration after annealing at 700°C.…”

Section: Resultsmentioning

confidence: 99%

Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy

Bentoumi¹,

Yaïche²,

Leonelli³

et al. 2008

Journal of Applied Physics

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We have investigated the optical emission from GaAs 1−x N x epilayers with 4.3ϫ 10 −4 Ͻ x Ͻ 0.012. The samples were grown on GaAs͑001͒ substrates by metal-organic vapor phase epitaxy using dimethylhydrazine as the nitrogen precursor. We find that the incorporation of nitrogen in GaAs generates deep radiative centers at around 250 meV below the GaAsN band gap. The defects associated with these centers can be eliminated through an optimization of the growth temperature and reactor pressure, and by postgrowth annealing at 700°C. We also find that, contrary to what was suggested by Makimoto et al. ͓Appl. Phys. Lett. 70, 2984 ͑1997͔͒, the near-gap emission located close to 25 meV below the gap is not related to a free-to-bound transition even in the samples with the lowest nitrogen content. Rather, we associate this emission to excitons bound to overlapping nitrogen clusters.

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Nitrogen incorporation and lattice constant of strained diluteGaAs1−xNxlayers on GaAs (001): Anab initiostudy

Cited by 13 publications

References 42 publications

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Growth and properties of the dilute bismide semiconductor GaAs<SUB align=right>1−xBi<SUB align=right>x a complementary alloy to the dilute nitrides

Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy

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Nitrogen incorporation and lattice constant of strained diluteGaAs1−xNxlayers on GaAs (001): Anab initiostudy

Cited by 13 publications

References 42 publications

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Growth and properties of the dilute bismide semiconductor GaAs<SUB align=right>1&minus;xBi<SUB align=right>x a complementary alloy to the dilute nitrides

Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy

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Growth and properties of the dilute bismide semiconductor GaAs<SUB align=right>1−xBi<SUB align=right>x a complementary alloy to the dilute nitrides