Nitrogen incorporation during PVD deposition of TiO 2 :N thin films

Manova, D.; Arias, Lina María Franco; Hofele, Axel Andrés; Alani, Ivo Andrés; Kleiman, A; Asenova, I.; Decker, Ulrich; Márquez, A.; Mändl, S.

doi:10.1016/j.surfcoat.2016.08.085

Cited by 14 publications

(7 citation statements)

References 28 publications

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Section: X-ray Photoelectron Spectroscopy (Xps)supporting

confidence: 94%

“…In this way, for both cases, it is demonstrated that the procedure to introduce or impregnate nitrogen has been carried out successfully. Our results are in agreement with those results reported by other authors regarding the position of the N peak [26][27][28]. The quantification of the elements through the integration under the curve of each of their corresponding reflections gave us the following values summarized in Table 3.…”

Section: X-ray Photoelectron Spectroscopy (Xps)supporting

confidence: 92%

“…In this regard, nitrogen-doping has been considered one of most effective approaches to improve photocatalytic activity of TiO 2 in the visible region [25]. The methods currently reported to achieve it superficially or by replacing atoms include ion implantation [26], physical vapor deposition [27], and spray pyrolysis [28], as well as variants of the known process of sol-gel. An alternative method to include nitrogen is the refluxing methodology, which consists of inducing intimate contact between the nitrogen source precursor (hydrazine, urea, ethylene diamine, etc.)…”

Section: Introductionmentioning

confidence: 99%

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Comparing the Efficiency of N-Doped TiO2 and N-Doped Bi2MoO6 Photo Catalysts for MB and Lignin Photodegradation

et al. 2018

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In this study, we tested the efficiency of nitrogen-doped titanium dioxide (N-TiO2) and nitrogen-doped bismuth molybdate (N-Bi2MoO6) compounds as photocatalysts capable of degrading methylene blue and lignin molecules under irradiation with ultraviolet (UV) and visible light (VIS). Moreover, we compared TiO2 and Bi2MoO6 catalysts with N-TiO2 and N-Bi2MoO6 compounds using chemical coprecipitation. The catalysts were prepared starting from Ti(OCH2CH2CH3)4, Bi(NO3)3·5H2O, and (NH4)6Mo7O24 reagents. N-doping was achieved in a continuous reflux system, using ethylene diamine as a nitrogen source. The resulting materials were characterized using Scanning Electron Microscopy (SEM), X-Ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). Additionally, we observed the decrease in particle size after processing the compounds in the reflux system. The results regarding photocatalytic degradation tests show a remarkable effect for nitrogen doped samples, achieving 90% of lignin degradation.

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Section: X-ray Photoelectron Spectroscopy (Xps)supporting

confidence: 94%

Section: X-ray Photoelectron Spectroscopy (Xps)supporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Comparing the Efficiency of N-Doped TiO2 and N-Doped Bi2MoO6 Photo Catalysts for MB and Lignin Photodegradation

et al. 2018

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“…The properties and applicability of TiO 2 thin films are intrinsically related to their crystal structure. In this sense, they have been mainly produced in amorphous, anatase and/or rutile structure forms by a wide range of techniques, namely sol-gel [21,22], magnetron sputtering [23,24], chemical vapor deposition (CVD) [25], physical vapor deposition (PVD) [26], atomic layer deposition (ALD) [27,28] and plasma-enhanced atomic layer deposition (PEALD) [29][30][31][32][33][34]. Among them, PEALD requires lower substrate and process temperatures to obtain crystalline films [35].…”

Section: Introductionmentioning

confidence: 99%

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

et al. 2020

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In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO2 and TiO2/Al2O3 nanolaminate films on p-Si(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. In the PEALD process, we used titanium tetraisopropoxide (TTIP) as a titanium precursor, trimethyl aluminum (TMA) as an aluminum precursor and O2 plasma as an oxidant, keeping the process temperature at 250 °C. The effects of PEALD process parameters, such as RF power, substrate exposure mode (direct or remote plasma exposure) and Al2O3 partial-monolayer insertion (generating a nanolaminate structure) on the physical and chemical properties of the TiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), Raman spectroscopy, grazing incidence X-ray diffraction (GIXRD), and field emission scanning electron microscopy (FESEM) techniques. The MOS capacitor structures were fabricated by evaporation of Al gates through mechanical mask on PEALD TiO2 thin film, followed by evaporation of an Al layer on the back side of the Si substrate. The capacitors were characterized by current density-voltage (J-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Our results indicate that RF power and exposure mode promoted significant modifications on the characteristics of the PEALD TiO2 films, while the insertion of Al2O3 partial monolayers allows the synthesis of TiO2/Al2O3 nanolaminate with well-spaced crystalline TiO2 grains in an amorphous structure. The electrical characterization of the MOS structures evidenced a significant leakage current in the accumulation region in the PEALD TiO2 films, which could be reduced by the addition of partial-monolayers of Al2O3 in the bulk of TiO2 films or by reducing RF power.

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“…The thin film of TiN and TiO 2 can be synthesized by numerous techniques, such as chemical vapor deposition (CVD) [15,16], physical vapor deposition (PVD) [17,18], and reactive sputtering [19]. However, these techniques present certain disadvantages, such as high cost and complexity of equipment, low working pressure, of the order of 10 −3 mbar, high temperature above 600 °C and long duration [1].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of TiN and TiO2 thin films by cathodic cage plasma deposition: a brief review

Abreu

Naeem

Borges

et al. 2020

J Braz. Soc. Mech. Sci. Eng.

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The cathodic cage plasma deposition (CCPD) is an advanced technique recently developed from an active screen plasma nitriding system, which has been used for thin film deposition such as titanium nitride and titanium dioxide (TiO 2). These coatings can improve the physical, mechanical, and optical properties of numerous materials, and such coatings can be developed by several techniques. Unfortunately, the conventional deposition techniques exhibit certain drawbacks, including high cost, the complexity of the operation, very low pressure, and high processing temperature; as a result, CCPD is an advantageous technique. In this review, brief information on the deposition of titanium nitride and oxide coatings on steel alloys, titanium, glass, and silicon substrates, and the effect of control parameters on deposition efficiency is provided. The effectiveness of this system for the synthesis of thin films on various substrates, including insulators and conductors, is also summarized. The recent developments and applications of CCPD for titanium-based coatings are described in detail.

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Nitrogen incorporation during PVD deposition of TiO 2 :N thin films

Cited by 14 publications

References 28 publications

Comparing the Efficiency of N-Doped TiO2 and N-Doped Bi2MoO6 Photo Catalysts for MB and Lignin Photodegradation

Comparing the Efficiency of N-Doped TiO2 and N-Doped Bi2MoO6 Photo Catalysts for MB and Lignin Photodegradation

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

Synthesis of TiN and TiO2 thin films by cathodic cage plasma deposition: a brief review

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