Nitrogen-induced transient enhanced diffusion of dopants

Murthy, C. S.; Lee, Kilho; Rengarajan, R.; Dokumaci, O.; Ronsheim, P.; Tews, H.; Inaba, S.

doi:10.1063/1.1470692

Cited by 7 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 -10 Nitrogen also locks dislocations, [11][12][13] modifies oxygen precipitation, 14,15 and may induce transient-enhanced diffusion of dopants. 16 It also suppresses void formation which are known to degrade the properties of semiconductor devices, as they can cause failure of gate oxides. 17 The mechanism may be due to the formation of nitrogen-vacancy centers stable at the growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Vibrational modes and electronic properties of nitrogen defects in silicon

et al. 2003

View full text Add to dashboard Cite

Nitrogen impurities form complexes with native defects such as vacancies and self-interstitials in silicon which are stable to high temperatures. These complexes can then suppress the formation of large vacancy and self-interstitial clusters. However, there is little known about their properties. We use first-principles densityfunctional theory to the determine the local vibrational modes, electrical levels and stability of a range of nitrogen-interstitial and vacancy complexes. Tentative assignments of the ABC photoluminescence line and the trigonal SL6 EPR center are made to substitutional-nitrogen pair and the substitutional-nitrogen-vacancy complex.

show abstract

Section: Introductionmentioning

confidence: 99%

Vibrational modes and electronic properties of nitrogen defects in silicon

et al. 2003

View full text Add to dashboard Cite

show abstract

“…This reduction of TED was also seen when high-dose nitrogen at 0 tilt angle is co-implanted with BF , which was characterized to be due to interstitial traps and strain-induced gettering [6]. But when the projected range ( ) of nitrogen is matched to that of dopant [7] or smaller than that of dopant [8], nitrogen implant-induced defects possibly enhance dopant TED. In this experiment, LATIN is designed as an another type of halo implant and further such that of low-dose nitrogen is larger than that of boron and as-implanted nitrogen atoms are located at the diffusion paths of boron in both vertical and lateral directions.…”

Section: Experimental and Simulationsmentioning

confidence: 80%

Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN)

Lee

Murthy

Rengarajan

et al. 2002

IEEE Electron Device Lett.

View full text Add to dashboard Cite

A widely used halo implant process of counter doping has a tradeoff between the short channel effects and the parasitic junction capacitance. In this letter, we propose a novel drain engineering concept, large-angle-tilt-implantation of nitrogen (LATIN) to improve the short-channel effects without the increase of the junction capacitance in the buried-channel pMOSFET using sub-0.25-m CMOS technology. We compare the electrical characteristics of devices fabricated using LATIN, a conventional arsenic halo implant process (As HALO), and BF + 2 source/drain (S/D) implantation only. The LATIN improves the short-channeleffects when compared to the case of BF + 2 S/D implant only. In addition, the LATIN reduces junction capacitance by 18% when compared to As HALO. As a consequence, the LATIN is shown to be a drain engineering concept to simultaneously optimize the short-channel effects and junction capacitance. Calibrated two-dimensional simulations confirm the improvement with LATIN.

show abstract

“…The N-suppression effect on the as-grown defects in Si is very suitable for the fabrication of insulated gate bipolar transistors (IGBTs) which have attracted considerable attention for their potential use in the electric vehicle industry [23]. There is experimental evidence that N implantation in Si induces transient enhanced diffusion of dopants [24]. N can suppress the effect of deleterious defects in Si, for instance of substitutional Au impurities, by reducing their concentration [25].…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-Related Defects in Crystalline Silicon

Sgourou,

Sarlis,

Chroneos

et al. 2024

Applied Sciences

View full text Add to dashboard Cite

Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example Ni, Ns, NiNi, NiNs, NsNs); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example NsV, (NiNi)Sii, (NsNs)V); nitrogen–oxygen defects (for example NO, NO2, N2O, N2O2); more extended clusters such as VmN2On (m, n = 1, 2); and nitrogen–carbon defects (for example CiN and CiNO). Both experimental and theoretical investigations are considered as they provide complementary information.

show abstract

Nitrogen-induced transient enhanced diffusion of dopants

Cited by 7 publications

References 6 publications

Vibrational modes and electronic properties of nitrogen defects in silicon

Vibrational modes and electronic properties of nitrogen defects in silicon

Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN)

Nitrogen-Related Defects in Crystalline Silicon

Contact Info

Product

Resources

About