Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

Abstract

The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm(2). The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

Study of the effects of Ni+ ion implantation on morphology, structure, hardness, and electrical conductivity of brass

“…9 Carbon ions were implanted at 1 MeV to improve surface properties in Al, Co, and W, and their results revealed that increase of the profile asymmetry of the diffraction peaks can be due to generation of dislocations and nano hardness increased in Al and W than Co. 10 Particle accelerators are commonly used for surface modification and ion implantation of various thin films, metals, alloys, and semiconductors material. [11][12][13] It is effectively used to improve the structure, wear, hardness, and tensile properties of materials. 14 Ion sources generated a beam of charged particles, injected into the surface to fabricate new properties of the material.…”